Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Suryavanshi, Saurabh V."'
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide thickness.
Externí odkaz:
http://arxiv.org/abs/2105.10791
Autor:
Suryavanshi, Saurabh V., Magyari-Kope, Blanka, Lim, Paul, McClellan, Connor, Smithe, Kirby K. H., English, Chris D., Pop, Eric
Electrical contact resistance to two-dimensional (2D) semiconductors such as monolayer MoS_{2} is a key bottleneck in scaling the 2D field effect transistors (FETs). The 2D semiconductor in contact with three-dimensional metal creates unique current
Externí odkaz:
http://arxiv.org/abs/2105.10792
Publikováno v:
ACS Nano 15, 1587-1596 (2021)
Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with conventional sem
Externí odkaz:
http://arxiv.org/abs/2012.15350
Electrical and thermal properties of atomically thin two-dimensional (2D) materials are affected by their environment, e.g. through remote phonon scattering or dielectric screening. However, while it is known that mobility and thermal conductivity (T
Externí odkaz:
http://arxiv.org/abs/2007.05032
Publikováno v:
Journal of Applied Physics 126, 055107 (2019)
Understanding the thermal properties of two-dimensional (2D) materials and devices is essential for thermal management of 2D applications. Here we perform molecular dynamics simulations to evaluate both the specific heat of $MoS_{2}$ as well as the t
Externí odkaz:
http://arxiv.org/abs/1901.02447
Autor:
Yalon, Eilam, Aslan, Özgür Burak, Smithe, Kirby K. H., McClellan, Connor J., Suryavanshi, Saurabh V., Xiong, Feng, Sood, Aditya, Neumann, Christopher M., Xu, Xiaoqing, Goodson, Kenneth E., Heinz, Tony F., Pop, Eric
Publikováno v:
ACS Applied Materials & Interfaces (2017)
The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer MoS$_2$ with
Externí odkaz:
http://arxiv.org/abs/1710.07650
Autor:
Yalon, Eilam, McClellan, Connor J., Smithe, Kirby K. H., Rojo, Miguel Muñoz, Runjie, Xu, Suryavanshi, Saurabh V., Gabourie, Alex J., Neumann, Christopher M., Xiong, Feng, Farimani, Amir B., Pop, Eric
Publikováno v:
Nano Letters (2017)
The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or multi-layered p
Externí odkaz:
http://arxiv.org/abs/1704.08270
Autor:
Suryavanshi, Saurabh V., Pop, Eric
Publikováno v:
J. Applied Physics (2016)
We present a physics-based compact model for two-dimensional (2D) field-effect transistors (FETs) based on monolayer semiconductors such as MoS2. A semi-classical transport approach is appropriate for the 2D channel, enabling simplified analytical ex
Externí odkaz:
http://arxiv.org/abs/1610.08489
Publikováno v:
2D Materials (Dec 2016)
We demonstrate monolayer MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated devices over a wide range of carrier densities (up to ~10^13 1/cm^2) and temperatures (80-500 K). Transfer len
Externí odkaz:
http://arxiv.org/abs/1608.00987
Publikováno v:
Journal of Applied Physics; 8/7/2019, Vol. 126 Issue 5, pN.PAG-N.PAG, 7p, 4 Graphs
