Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Suryanarayan G. Hegde"'
Autor:
Timothy J. Chainer, J. Horkans, Inna V. Babich, Lubomyr T. Romankiw, Philip L. Trouilloud, Emanuel I. Cooper, Nancy C. LaBianca, James A. Tornello, Christopher V. Jahnes, Suryanarayan G. Hegde, Keith T. Kwietniak, Sol Krongelb, Eugene J. O'Sullivan, John M. Cotte
Publikováno v:
IBM Journal of Research and Development. 42:681-694
The use of lithography and electroplating to fabricate variable-reluctance, nearly planar, integrated minimotors with 6-mm-diameter rotors on silicon wafers is described. The motors consist of six electroplated Permalloy® horseshoe-shaped cores that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af4c4c0b61f2f97d15dacdbb172f2949
https://doi.org/10.1147/rd.425.0681
https://doi.org/10.1147/rd.425.0681
Autor:
Teresita Ordonez Graham, Bruce K. Furman, Christos D. Dimitrakopoulos, Sampath Purushothaman, Suryanarayan G. Hegde
Publikováno v:
Scopus-Elsevier
Insulated-gate field-effect transistors (IGFETs) comprising molecular beam deposited α,ω-di-hexyl-hexathienylene (DH6T) as the semiconductor layer and different polymeric gate insulators were fabricated and tested. Field-effect mobility values up t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::818f98117039ded5d6aa225a3024bf5b
https://doi.org/10.1016/s0379-6779(98)80021-0
https://doi.org/10.1016/s0379-6779(98)80021-0
Autor:
Suryanarayan G. Hegde, R.A. Roy, Hon-Sum Philip Wong, T. Kanarsky, Zhibin Ren, O. Dokumaci, P. Oldiges, M. Leong, Bruce B. Doris, E.C. Jones
Publikováno v:
IEEE Electron Device Letters. 23:609-611
We present an experimental study of the transport properties (low field hole mobility /spl mu//sub h/) and electrostatics (threshold voltage V/sub th/, and gate-to-channel capacitance C/sub gc/) of ultrathin body (UTB) SOI pMOSFETs using a large Ring
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d3a233b257b87e21ccdec43cb7eb21e
https://doi.org/10.1109/led.2002.803757
https://doi.org/10.1109/led.2002.803757
Publikováno v:
IEEE Electron Device Letters. 23:547-549
A widely used halo implant process of counter doping has a tradeoff between the short channel effects and the parasitic junction capacitance. In this letter, we propose a novel drain engineering concept, large-angle-tilt-implantation of nitrogen (LAT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1bed77ead733802cdf01304248aa5ec
https://doi.org/10.1109/led.2002.801324
https://doi.org/10.1109/led.2002.801324
Autor:
James A. Tornello, W.J. Horkans, L.T. Romankiw, E.I. Cooper, Inna V. Babich, Philip L. Trouilloud, Timothy J. Chainer, Nancy C. LaBianca, Keith T. Kwietniak, Sol Krongelb, E.J.M. O'Sullivan, Christopher V. Jahnes, Suryanarayan G. Hegde
Publikováno v:
1997 IEEE International Magnetics Conference (INTERMAG'97).
Infroducfion: Small-size, highefficiency motors, fabricated by low cost batch fabrication techniques, are expected to have application in storage, automotive, medical and other fields. We describe a new approach to fabrication of an integrated experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90daabfb1acb5c7e4b820b6716844d23
https://doi.org/10.1109/intmag.1997.597394
https://doi.org/10.1109/intmag.1997.597394
Autor:
Paul Ronsheim, Huilong Zhu, Kam-leung Lee, Suryanarayan G. Hegde, P. Saunders, O. Dokumaci, U. Mantz, F. Cardone
Publikováno v:
International Conferencre on Simulation of Semiconductor Processes and Devices.
The diffusion of implanted boron in strained Si/Si/sub 1-x/Ge/sub x/ is investigated. A continuum segregation model (CSM) is presented to describe the phenomenon of B pile-up into the germanium profile. An analytic formula is obtained for Ge pre-amor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acf8fa79b9681b86c1b970390d257c9e
https://doi.org/10.1109/sispad.2002.1034557
https://doi.org/10.1109/sispad.2002.1034557
Autor:
Michael A. Gribelyuk, Paul Ronsheim, C. S. Murthy, David J. Smith, Suryanarayan G. Hegde, Martha R. McCartney, Jing Li, J. S. McMurray, Bruce B. Doris
Publikováno v:
Physical Review Letters. 89
Quantitative two-dimensional maps of electrostatic potential in device structures are obtained using off-axis electron holography with a spatial resolution of 6 nm and a sensitivity of 0.17 V. Estimates of junction depth and variation in electrostati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e28c77ae8a2ad8c9e06f9d1e2cf01746
https://doi.org/10.1103/physrevlett.89.025502
https://doi.org/10.1103/physrevlett.89.025502