Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Surya Shankar Dan"'
Autor:
Soumi Saha, Madadi Chetan Kodand Reddy, Tati Sai Nikhil, Kaushik Burugupally, Sanghamitra DebRoy, Akshay Salimath, Venkat Mattela, Surya Shankar Dan, Parikshit Sahatiya
Publikováno v:
Chip, Vol 2, Iss 4, Pp 100075- (2023)
This paper demonstrated the fabrication, characterization, data-driven modeling, and practical application of a 1D SnO2 nanofiber-based memristor, in which a 1D SnO2 active layer was sandwiched between silver (Ag) and aluminum (Al) electrodes. This d
Externí odkaz:
https://doaj.org/article/cf85e51ab95a4a38815caca28e88513c
Publikováno v:
IEEE Transactions on Electron Devices. 69:5921-5927
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ed81948bb19ab16e0fc7e96d85191e5
https://doi.org/10.1109/ted.2022.3199710
https://doi.org/10.1109/ted.2022.3199710
Autor:
Simhadri Hariprasad, Surya Shankar Dan
Publikováno v:
Silicon. 15:117-126
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::596220e4153b06efc3b132acd053378e
https://doi.org/10.1007/s12633-022-01954-7
https://doi.org/10.1007/s12633-022-01954-7
Publikováno v:
IETE Technical Review. 39:1114-1123
This work reports low and high threshold gate-overlap tunnel FET (GOTFET) devices for ternary logic applications. An iterative numerical algorithm was developed, which optimises the GOTFET structur...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9863bb6af5b3d6017558ad67c1c83ab6
https://doi.org/10.1080/02564602.2021.1960903
https://doi.org/10.1080/02564602.2021.1960903
Publikováno v:
International Journal of Circuit Theory and Applications. 49:2094-2111
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bce38d2ed6bc892d1296f07f4f6aced
https://doi.org/10.1002/cta.3002
https://doi.org/10.1002/cta.3002
Autor:
Sanjay Vidhyadharan, Surya Shankar Dan
Publikováno v:
IEEE Transactions on Nanotechnology. 20:365-376
This paper presents a novel ultra-low power yet high-performance device and circuit design paradigm for implementing ternary logic based circuits using Gate-Overlap Tunnel FETs (GOTFETs) and Carbon Nanotube FETs (CNFETs). One of the distinguishing no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08eeb76ddbf1b634e4b371073a22279f
https://doi.org/10.1109/tnano.2020.3049087
https://doi.org/10.1109/tnano.2020.3049087
Publikováno v:
Silicon. 13:1185-1197
This paper investigates a method to suppress the ambipolar current Iamb effectively, enhance the device performance with higher on current Ion, lower off current Ioff, lower inverse subthreshold slope SS and simultaneously improve the RF performance.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7e788f59094961ee08cda9052b1778a
https://doi.org/10.1007/s12633-020-00506-1
https://doi.org/10.1007/s12633-020-00506-1
Publikováno v:
Integration. 73:101-113
This paper presents a highly efficient ternary flash ADC, designed using the innovative gate-overlap tunnel FET (GOTFET) at the 45 nm technology node. The proposed GOTFETs have on-state currents Ion more than double, while the off-state currents Ioff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61eb4ddfe359c95e6c3f32037416fd05
https://doi.org/10.1016/j.vlsi.2020.03.006
https://doi.org/10.1016/j.vlsi.2020.03.006
Publikováno v:
International Journal of Electronics. 107:1663-1681
Recent researches have indicated that the gate-overlap tunnel FETs (GOTFETs) exhibit double the on-currents I o n and one-tenth the off-currents I o f f than the equally sized MOSFETs at the same t...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b7abf8028bc9c294cb1e0d6c001549d
https://doi.org/10.1080/00207217.2020.1740800
https://doi.org/10.1080/00207217.2020.1740800
Publikováno v:
Journal of Computational Electronics. 19:291-303
In this paper, four different types of gate-overlap tunnel FET (GOTFET) devices are proposed for ultra-low power applications: (1) generic GOTFETs for digital logic, (2) low- and high-threshold (LVT and HVT) GOTFETs for ternary logic, (3) multi-thres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bc26e765e96e5e37ca9733bd2f35103
https://doi.org/10.1007/s10825-019-01440-1
https://doi.org/10.1007/s10825-019-01440-1