Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Surasing Chaiyakun"'
Autor:
Narong Chanlek, Surasing Chaiyakun, Chutima Paksunchai, Rungrueang Phatthanakun, Chirawat Chantharangsi, Pattanaphong Janphuang, Chutima Oopathump
Publikováno v:
Key Engineering Materials. 824:254-259
Chromium aluminum nitride (CrAlN) has been extensively studied because of high hardness, high oxidation and corrosion resistance, and good wear resistance. However, utilizing substrate treatments such as heating and voltage biasing during film deposi
Autor:
Surasing Chaiyakun, W. Phae-ngam, Hideki Nakajima, Chanunthorn Chananonnawathorn, Prayoon Songsiriritthigul, Tossaporn Lertvanithphol, B. Samransuksamer, Mati Horprathum
Publikováno v:
Current Applied Physics. 19:894-901
Nanocolumnar titanium zirconium nitride (TiZrN) films deposited on silicon wafer substrates were fabricated via reactive magnetron co-sputtering with oblique angle deposition (OAD) at room temperature. The influences of the sputtering power of Zr tar
Autor:
Surasing Chaiyakun, Somyod Denchitcharoen, Pichet Limsuwan, Chutima Paksunchai, Chirawat Chantharangsi
Publikováno v:
Key Engineering Materials. 798:152-157
Very thin titanium chromium nitride (TiCrN) films with various Ti content were deposited by unbalanced magnetron co-sputtering of Ti and Cr metals. Deposition time was set to 15 min to achieve film thickness ranging from 142 to 190 nm. Silicon wafers
Publikováno v:
Materials Sciences and Applications. 10:216-226
In this work, structural and optical properties of the TiO2 films deposited on unheated substrates by dual cathode dc unbalanced magnetron sputtering at long substrate-target distance (ds-t) were studied. Titanium dioxide (TiO2) thin films were depos
Autor:
Pichet Limsuwan, Somyod Denchitcharoen, Chutima Paksunchai, Chirawat Chantharangsi, Surasing Chaiyakun
Publikováno v:
Materials Today: Proceedings. 5:15155-15159
Chromium zirconium nitride (CrZrN) thin films were prepared on Si (100) substrates with various Zr contents by using co-sputtering technique. The Zr content was varied by variation of the Zr sputtering current from 0.2 to 0.8 A while the Cr current a
Autor:
Nirun Witit-Anun, Alongkot Treetong, Pichet Limsuwan, Surasing Chaiyakun, Jindawan Thammapreecha, Bundit Putasaeng
Publikováno v:
International Journal of Natural Sciences Research. 5:50-54
ZrTiO4 thin films were deposited by reactive dc magnetron co-sputtering method without heating. The crystal structure, surface morphology, thickness, optical and dielectric properties of the thin films were investigated. At sputtering currents above
Publikováno v:
Thin Solid Films. 711:138269
The nanostructured titanium oxynitride (TiOxNy) thin film was fabricated by a reactive direct current magnetron sputtering method at room temperature. The mechanism of TiOxNy thin film formation depended on the proportion of oxygen and nitrogen gases
Publikováno v:
Thin Solid Films. 589:613-619
Chromium zirconium nitride (CrZrN) thin films were prepared on Si wafers and glasses at various Zr contents by reactive DC magnetron co-sputtering of Cr and Zr metals in Ar and N 2 mixture without voltage biasing and external heating. Influences of t
Autor:
Pornpipat Boosabarat, Kanchaya Honglertkongsakul, Surasing Chaiyakun, Nirun Witit-Anun, Dusit Ngamrungroj
Publikováno v:
Advanced Materials Research. 979:289-292
Deposition of aluminum and zinc targets was carried out by DC magnetron sputtering to produce aluminum doped zinc oxide (AZO) thin films. These films were deposited on quartz, glass and silicon substrates under 5.5x10-3 mbar pressure. At a ratio of a
Publikováno v:
Advanced Materials Research. 979:355-358
In this work, TiO2thin films were prepared by a sol-gel spin coating method on glass slide, stainless steel 304 and silicon wafer substrates. The thin films were annealed at different temperatures at ambient atmosphere. The effect of substrates and a