Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Suraj S. Cheema"'
Autor:
Jangsaeng Kim, Eun Chan Park, Wonjun Shin, Ryun-Han Koo, Chang-Hyeon Han, He Young Kang, Tae Gyu Yang, Youngin Goh, Kilho Lee, Daewon Ha, Suraj S. Cheema, Jae Kyeong Jeong, Daewoong Kwon
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-14 (2024)
Abstract Analog reservoir computing (ARC) systems have attracted attention owing to their efficiency in processing temporal information. However, the distinct functionalities of the system components pose challenges for hardware implementation. Herei
Externí odkaz:
https://doaj.org/article/5764878e0d0b491a822370b58b27bf4e
Publikováno v:
Nano Letters. 23:3267-3273
Autor:
Suraj S. Cheema, Nirmaan Shanker, Shang-Lin Hsu, Yoonsoo Rho, Cheng-Hsiang Hsu, Vladimir A. Stoica, Zhan Zhang, John W. Freeland, Padraic Shafer, Costas P. Grigoropoulos, Jim Ciston, Sayeef Salahuddin
Publikováno v:
Science (New York, N.Y.), vol 376, iss 6593
The critical size limit of voltage-switchable electric dipoles has extensive implications for energy-efficient electronics, underlying the importance of ferroelectric order stabilized at reduced dimensionality. We report on the thickness-dependent an
Autor:
Suraj S. Cheema, Nirmaan Shanker, Li-Chen Wang, Cheng-Hsiang Hsu, Shang-Lin Hsu, Yu-Hung Liao, Matthew San Jose, Jorge Gomez, Wriddhi Chakraborty, Wenshen Li, Jong-Ho Bae, Steve K. Volkman, Daewoong Kwon, Yoonsoo Rho, Gianni Pinelli, Ravi Rastogi, Dominick Pipitone, Corey Stull, Matthew Cook, Brian Tyrrell, Vladimir A. Stoica, Zhan Zhang, John W. Freeland, Christopher J. Tassone, Apurva Mehta, Ghazal Saheli, David Thompson, Dong Ik Suh, Won-Tae Koo, Kab-Jin Nam, Dong Jin Jung, Woo-Bin Song, Chung-Hsun Lin, Seunggeol Nam, Jinseong Heo, Narendra Parihar, Costas P. Grigoropoulos, Padraic Shafer, Patrick Fay, Ramamoorthy Ramesh, Souvik Mahapatra, Jim Ciston, Suman Datta, Mohamed Mohamed, Chenming Hu, Sayeef Salahuddin
Publikováno v:
Nature, vol 604, iss 7904
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage1. This led to a fundamental changein the
Autor:
Suraj S. Cheema, Nirmaan Shanker, Cheng‐Hsiang Hsu, Adhiraj Datar, Jongho Bae, Daewoong Kwon, Sayeef Salahuddin
Publikováno v:
Advanced Electronic Materials. 8:2270025
Autor:
Suraj S, Cheema, Nirmaan, Shanker, Li-Chen, Wang, Cheng-Hsiang, Hsu, Shang-Lin, Hsu, Yu-Hung, Liao, Matthew, San Jose, Jorge, Gomez, Wriddhi, Chakraborty, Wenshen, Li, Jong-Ho, Bae, Steve K, Volkman, Daewoong, Kwon, Yoonsoo, Rho, Gianni, Pinelli, Ravi, Rastogi, Dominick, Pipitone, Corey, Stull, Matthew, Cook, Brian, Tyrrell, Vladimir A, Stoica, Zhan, Zhang, John W, Freeland, Christopher J, Tassone, Apurva, Mehta, Ghazal, Saheli, David, Thompson, Dong Ik, Suh, Won-Tae, Koo, Kab-Jin, Nam, Dong Jin, Jung, Woo-Bin, Song, Chung-Hsun, Lin, Seunggeol, Nam, Jinseong, Heo, Narendra, Parihar, Costas P, Grigoropoulos, Padraic, Shafer, Patrick, Fay, Ramamoorthy, Ramesh, Souvik, Mahapatra, Jim, Ciston, Suman, Datta, Mohamed, Mohamed, Chenming, Hu, Sayeef, Salahuddin
Publikováno v:
Nature. 604(7904)
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage
Autor:
Yadav AK; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA., Nguyen KX; Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY, USA., Hong Z; Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, USA., García-Fernández P; Departamento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Santander, Spain., Aguado-Puente P; Atomistic Simulation Centre, Queen's University Belfast, Belfast, UK., Nelson CT; National Center for Electron Microscopy, Lawrence Berkeley Laboratory, Berkeley, CA, USA.; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA., Das S; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA., Prasad B; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA., Kwon D; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA., Cheema S; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA., Khan AI; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA., Hu C; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA., Íñiguez J; Materials Research and Technology Department, Luxembourg Institute of Science and Technology, Esch/Alzette, Luxembourg., Junquera J; Departamento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Santander, Spain., Chen LQ; Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, USA., Muller DA; School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.; Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA., Ramesh R; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA., Salahuddin S; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA. sayeef@berkeley.edu.
Publikováno v:
Nature [Nature] 2019 Apr; Vol. 568 (7753), pp. E13.
Autor:
Yadav AK; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA., Nguyen KX; Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY, USA., Hong Z; Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, USA., García-Fernández P; Departamento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Santander, Spain., Aguado-Puente P; Atomistic Simulation Centre, Queen's University Belfast, Belfast, UK., Nelson CT; National Center for Electron Microscopy, Lawrence Berkeley Laboratory, Berkeley, CA, USA.; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA., Das S; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA., Prasad B; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA., Kwon D; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA., Cheema S; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA., Khan AI; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA., Hu C; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA., Íñiguez J; Materials Research and Technology Department, Luxembourg Institute of Science and Technology, Esch/Alzette, Luxembourg., Junquera J; Departamento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Santander, Spain., Chen LQ; Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, USA., Muller DA; School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.; Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA., Ramesh R; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA., Salahuddin S; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA. sayeef@berkeley.edu.
Publikováno v:
Nature [Nature] 2019 Jan; Vol. 565 (7740), pp. 468-471. Date of Electronic Publication: 2019 Jan 14.