Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Suraj Bhaskaran"'
Publikováno v:
Micro- and Nanotechnology Sensors, Systems, and Applications XI.
CdSe/ZnS quantum dot (QD) incorporation into a magnesium fluoride matrix that is transparent at deep VUV wavelengths was developed. Silicon-based CMOS and CCD detectors coated with a thick Lumogen layer is an inexpensive detector technology to sensit
Publikováno v:
Publications of the Astronomical Society of the Pacific. 132:055001
Publikováno v:
SPIE Proceedings.
Improving the sensitivity of silicon-based CMOS and CCD in the deep-UV is an area of ongoing interest. Lumogen has been used for this purpose for many years but has several known issues including limitations to its use in both vacuum and radiation ha
Publikováno v:
SPIE Proceedings.
Charge Injection Device technology has been widely used in radiation applications. Although the technology has excelled in ground applications that have been predominantly for radiation effects using gamma radiation, a Thermo Scientific CID8725D radi
The next fundamental steps forward in understanding our place in the universe could be a result of advances in extreme contrast ratio (ECR) imaging and point spread function (PSF) suppression. For example, blinded by quasar light we have yet to fully
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1b1a6476985e95bf0b6400d3185301b
http://arxiv.org/abs/1511.03715
http://arxiv.org/abs/1511.03715
Autor:
Ross Robinson, Alan D. Raisanen, Uwe Arp, Denis Cormier, Herb Ziegler, Suraj Bhaskaran, Zoran Ninkov, Carey Beam, Robert E. Vest
Publikováno v:
SPIE Proceedings.
A technique has been developed for coating commercial off the shelf (COTS) detector arrays with a thin, uniform layer of quantum dots. The quantum deposition is accomplished using an Optomec Aerosol Jet rapid prototyping system. When illuminated by U
Publikováno v:
Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon.
The attributes of the scientific-grade 4k linear CID51 sensor are presented. The CID51 sensor is fabricated using 0.18 μm technology. The 0.18 μm design rules permit proximity-coupling of the two photogates within the pixel required for non-destruc
Publikováno v:
SPIE Proceedings.
The revolutionary charge-coupled device (CCD) was first described by George Smith and Willard Boyle of Bell Laboratories in 1969. Hubert Burke and Gerald Michon of General Electric (GE) followed with the invention of the charge-injection device (CID)
Publikováno v:
Journal of the Society for Information Display. 4:59
— The variation of luminance with transferred charge in ZnS:Mn ac thin-film electroluminescent (ACTFEL) display devices was analyzed to determine the roles played by the preferred current paths (filamentary conduction) and manganese clustering in l