Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Supawan Joonwichien"'
Autor:
Supawan Joonwichien
Kyoto University (京都大学)
0048
甲第16417号
エネ博第239号
新制||エネ||52(附属図書館)
29048
0048
甲第16417号
エネ博第239号
新制||エネ||52(附属図書館)
29048
Externí odkaz:
http://hdl.handle.net/2433/151897
Autor:
Katsuhiko Shirasawa, Hidetaka Takato, Supawan Joonwichien, Satoshi Utsunomiya, Yasuhiro Kida, Masaaki Moriya
Publikováno v:
IEEE Journal of Photovoltaics. 10:407-416
This article investigates metallization-induced recombination losses associated with the presence of silicon (Si) in the 1) rear passivation layers and 2) aluminum (Al) paste in fully screen-printed p -type passivated emitter and rear cell (PERC) sol
Autor:
Hidetaka Takato, Yasuhiro Kida, Masaaki Moriya, Supawan Joonwichien, Katsuhiko Shirasawa, Satoshi Utsunomiya
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
We propose a physical mechanism that explains the local contact formation stimulated by the aluminum-silicon (Al-Si) interdiffusion within the various widths of Al rear grid for bifacial-passivated emitter and rear cell (Bi-PERC). The rear sides of B
Autor:
Hidetaka Takato, Yasuhiro Kida, Katsuhiko Shirasawa, Satoshi Utsunomiya, Supawan Joonwichien, Masaaki Moriya
Publikováno v:
Solar Energy Materials and Solar Cells. 186:84-91
This paper presents the development of industrial-sized p-type passivated emitter and rear cells (PERCs) with a selective emitter (SE) structure. We focus on different assisted passivation schemes and use nitric acid oxidation of silicon (NAOS) to fo
Autor:
Supawan Joonwichien, Katsuhiko Shirasawa, Masaaki Moriya, Yasuhiro Kida, Satoshi Utsunomiya, Hidetaka Takato
Publikováno v:
IEEE Journal of Photovoltaics. :1-7
This paper introduces a selective phosphorus emitter formed by screen-printed resist masking combined with a wet chemical etch-back process for an industrial-sized passivated emitter and rear cell (PERC). Applying the selective emitter (SE) concept i
Autor:
Katsuhiko Shirasawa, Yasuhiro Kida, Supawan Joonwichien, Masaaki Moriya, Satoshi Utsunomiya, Hidetaka Takato
Publikováno v:
IEEE Journal of Photovoltaics. 8:54-58
We attempted to improve the performance of passivated emitter and rear cells by increasing the quality of the aluminum back surface field (Al-BSF) beneath the local contact. We demonstrate that a thicker Al-BSF can be obtained by adding Si to the scr
Publikováno v:
Energy Procedia. 124:412-417
This work presents the effects of different Al pastes on the rear contact formation in passivated emitter rear cells (PERC) after firing as well as the impact on cell performance. In this study, the rear side of PERC cells was metalized with two diff
Autor:
Supawan Joonwichien, Masaaki Moriya, Satoshi Utsunomiya, Yasuhiro Kida, Katsuhiko Shirasawa, Hidetaka Takato
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
We present metal-induced recombination losses associated with the silicon (Si) present both within rear passivation layers and in aluminum (Al) paste for passivated emitter and rear cells (PERCs) with full-area Al screen-printed contacts. In the form
Autor:
Hidetaka Takato, Katsuhiko Shirasawa, Shalamujiang Simayi, Katsuto Tanahashi, Supawan Joonwichien
Publikováno v:
Energy Procedia. 92:353-358
We studied the effects of thermal annealing on the interfacial properties of atomic-layer-deposited alumina (Al 2 O 3 ) films and aluminum oxide/silicon nitride (AlO x /SiN x ) stacks on silicon. Thermal treatment was found to have a significant effe
Publikováno v:
Progress in Photovoltaics: Research and Applications. 24:1615-1625
We investigated the effect of the grain boundary (GB) character of multicrystalline Si (mc-Si) on the efficiency of external and internal gettering of impurities during phosphorus diffusion gettering (PDG). We utilized seed crystals with an artificia