Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Suock Jeong"'
Autor:
Gucheol Jeong, Jaebuhm Suh, Ki-Soo Shin, Hoyeop Kweon, Yousung Kim, Sang-Don Lee, Seongjoon Lee, Jae-Sung Roh, Suock Jeong, Min Huh, Woncheol Cho, Hyunpil Noh
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
The first 8F/sup 2/ stack DRAM cell with 0.08 /spl mu/m/sup 2/ size has been successfully integrated by employing a poly plug scheme for landing plug contacts and W/poly gates and Ru MIM capacitors, of which cell working has been proven under easy fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f9329efea91eafe969658d4f5701772
https://doi.org/10.1109/vlsit.2002.1015386
https://doi.org/10.1109/vlsit.2002.1015386
Autor:
Hazoong Kim, Min Huh, Ysung Kim, Hyunpil Noh, Seongjoon Lee, Hee-koo Yoon, Jinwon Park, Gucheol Jeong, Dongseok Kim, Jaemin Ahn, Suock Jeong, Sang-Don Lee, Jaebuhm Suh, Woncheol Cho
Publikováno v:
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).
An 8F/sup 2/ stack DRAM cell, 0.115 /spl mu/m/sup 2/ in size, has been successfully integrated using a selective epitaxial plug scheme for landing plug contacts and poly metal gates and MIM COB capacitors, by which cell working has been proven under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53bf1bab4858ca4343c3e6eb9d6bf51a
https://doi.org/10.1109/vlsit.2001.934929
https://doi.org/10.1109/vlsit.2001.934929
Autor:
Hyunpil Noh, Suock Jeong, Seongjoon Lee, Yousung Kim, Woncheol Cho, Min Huh, Gucheol Jeong, Jaebuhm Suh, Hoyeop Kweon, Jaesung Roh, Kisoo Shin, Sangdon Lee
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303); 2002, p56-57, 2p
Autor:
Hyunpil Noh, Woncheol Cho, Gucheol Jeong, Min Huh, Jaemin Ahn, Ysung Kim, Suock Jeong, Seongjoon Lee, Dongseok Kim, Hazoong Kim, Jaebuhm Suh, Jinwon Park, Sang-don Lee, Hee-koo Yoon
Publikováno v:
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184); 2001, p25-26, 2p