Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Sunyong Hwang"'
Autor:
Dong Yeong Kim, Guan-Bo Lin, Sunyong Hwang, Jun Hyuk Park, David Meyaard, E. Fred Schubert, Han-Youl Ryu, Jong Kyu Kim
Publikováno v:
IEEE Photonics Journal, Vol 7, Iss 1, Pp 1-9 (2015)
A genetic algorithm is employed to find an optimum epitaxial structure of multiple quantum wells (MQWs) and electron-blocking layer (EBL) for a GaInN-based light-emitting diode (LED). The optimized LED is composed of locally Si-doped quantum barriers
Externí odkaz:
https://doaj.org/article/ee16a764c23c47e798f055838593dee4
Publikováno v:
AIP Advances, Vol 7, Iss 4, Pp 045116-045116-7 (2017)
Few layer hexagonal boron nitride (h-BN) films were grown on 2-inch sapphire substrates by using metal-organic chemical vapor deposition (MOCVD) with two different carrier gases, hydrogen (H2) and nitrogen (N2). Structural, optical and electrical
Externí odkaz:
https://doaj.org/article/c2f61dd4acdc4abe9480957de1c3a73f
Publikováno v:
AIP Advances, Vol 5, Iss 10, Pp 107104-107104-6 (2015)
The effects of the hole injection modulated by using a three-terminal GaInN-based light emitter, light-emitting triode (LET), on carrier recombination behavior and efficiency droop are investigated. It was found that the lateral electric field create
Externí odkaz:
https://doaj.org/article/987f7604048b44a7a9b8b61c3073fc26
Autor:
Seung Hyuk Lim, Jun Hyuk Park, Sunyong Hwang, Yong-Hoon Cho, Jong Kyu Kim, Mun Seok Jeong, Jong Hoi Cho, Hokyeong Jeong, Nam Han, Hyeon Jun Jeong
Publikováno v:
Crystal Growth & Design. 17:3649-3655
A hendecafacet (HF) microsized light emitter based on an InGaN/GaN multiple quantum well (MQW) is grown via selective area metal–organic chemical vapor deposition. The HF microsized light emitter is found to possess four crystallographic facets, (0
Publikováno v:
Chemistry of Materials. 25:1893-1899
In this work, nitrogen-rich carbon nanodots (CNDs) are prepared by the emulsion-templated carbonization of polyacrylamide. The formation mechanism and chemical structure are investigated by infrared, nuclear magnetic resonance, and X-ray photoelectro
Autor:
Jeong Min Baik, Sunyong Hwang, Sameer Chhajed, Ji Won Byon, Sang Ho Oh, Jiseong Im, Jong Kyu Kim, Seok-Jin Yoon, Hyunah Kwon, Ho Won Jang
Publikováno v:
The Analyst. 138:443-450
We present high performance gas sensors based on an array of near single crystalline TiO(2) nanohelices fabricated by rotating oblique angle deposition (OAD). The combination of large surface-to-volume ratio, extremely small size (30 nm) comparable t
Autor:
Guan-Bo Lin, E. Fred Schubert, Han-Youl Ryu, Jun Hyuk Park, Sunyong Hwang, Jong Kyu Kim, Dong Yeong Kim, David S. Meyaard
Publikováno v:
IEEE PHOTONICS JOURNAL(7): 1
IEEE Photonics Journal, Vol 7, Iss 1, Pp 1-9 (2015)
IEEE Photonics Journal, Vol 7, Iss 1, Pp 1-9 (2015)
A genetic algorithm is employed to find an optimum epitaxial structure of multiple quantum wells (MQWs) and electron-blocking layer (EBL) for a GaInN-based light-emitting diode (LED). The optimized LED is composed of locally Si-doped quantum barriers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::768ed82c39b15c5a16dbbdc923f47de3
http://open-repository.kisti.re.kr/cube/handle/open_repository/483288.do
http://open-repository.kisti.re.kr/cube/handle/open_repository/483288.do
Autor:
Byeong Kwon Ju, Nguyen Dien Kha Tu, Heesuk Kim, Jung Ah Lim, Sunyong Hwang, Eunji Lee, Seong Ran Jeon, Ho Sun Lim, Dong Youn Yoo, Su Jin Lee, Jong Kyu Kim
Publikováno v:
ACS nano. 8(5)
We have demonstrated the preparation of white-emissive conjugated polymer nanoparticles wrapped with graphene oxide (GO) nanosheets. Highly stable, GO-wrapped, poly(9,9-di-n-octylfluorenyl-2,7-diyl) nanoparticles (GO-PFO NPs) with diameters in the ra
Autor:
Junseok Jeong, Ji Eun Choi, Yong-Jin Kim, Sunyong Hwang, Sung Kyu Kim, Jong Kyu Kim, Hu Young Jeong, Young Joon Hong
Publikováno v:
Applied Physics Letters; 9/5/2016, Vol. 109 Issue 10, p101103-1-101103-5, 5p, 1 Diagram, 4 Graphs
Autor:
Jong Won Lee, Jun Hyuk Park, Sunyong Hwang, E. Fred Schubert, Jong Kyu Kim, Cheolsoo Sone, Jungsub Kim, Dong Yeong Kim, Seung Jae Oh
Publikováno v:
Light: Science & Applications. 4:e263-e263
While the demand for deep ultraviolet (DUV) light sources is rapidly growing, the efficiency of current AlGaN-based DUV light-emitting diodes (LEDs) remains very low due to their fundamentally limited light-extraction efficiency (LEE), calling for a