Monitoring the formation of oxide apertures in micropillar cavities

Autor: Bakker, Morten P., Snijders, Henk, Suntrup III, Donald J., Truong, Tuan-Ahn, Petroff, Pierre M., van Exter, Martin P., Bouwmeester, Dirk

An imaging technique is presented that enables monitoring of the wet thermal oxidation of a thin AlAs layer embedded between two distributed Bragg reflector (DBR) mirrors in a micropillar. After oxidation we confirm by white light reflection spectros

Externí odkaz: http://arxiv.org/abs/1301.6248

Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes.

Autor: Laurent, Matthew A., Gupta, Geetak, Suntrup III, Donald J., DenBaars, Steven P., Mishra, Umesh K.

Publikováno v: Journal of Applied Physics; 2/14/2016, Vol. 119 Issue 6, p1-7, 7p, 1 Color Photograph, 2 Charts, 4 Graphs

Transport Properties of III-N Hot Electron Transistors

Autor: Suntrup III, Donald J.

Publikováno v: Suntrup III, Donald J.(2015). Transport Properties of III-N Hot Electron Transistors. 0035: Physics. Retrieved from: http://www.escholarship.org/uc/item/7mh2s3n8

Unipolar hot electron transistors (HETs) represent a tantalizing alternative to established bipolar transistor technologies. During device operation electrons are injected over a large emitter barrier into the base where they travel along the device

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______325::7657f948ef1ee5dede8a22d9611ba4ea
http://www.escholarship.org/uc/item/7mh2s3n8

Measurement of the hot electron mean free path and the momentum relaxation rate in GaN.

Autor: Suntrup III, Donald J., Gupta, Geetak, Li, Haoran, Keller, Stacia, Mishra, Umesh K.

Publikováno v: Applied Physics Letters; 12/30/2014, Vol. 105 Issue 26, p1-3, 3p, 1 Diagram, 3 Graphs