Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Sunny Sadana"'
Publikováno v:
IEEE Electron Device Letters. 39:1159-1162
Physically unclonable functions (PUF) are essential for hardware identity and security for IoT devices. The PUF consists of a multi-bit string that requires unbiased randomness. A one-time programmable memory (OTPM) uses insulator breakdown in metal-
Autor:
Manan Suri, Avinash Kumar Singh, Pratiksha, H. S. Jatana, Akash Sharma, Deep Sehgal, Anuj Chawla, Ashwani Kumar, Udayan Ganguly, Sunny Sadana, Shouri Chatterjee
Publikováno v:
2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India).
Many emerging electronic devices are being used for computation, storage as well as several other purposes to decrease the scaling requirement of MOSFET. The accurate behavior prediction of such hybrid systems (MOSFET + Emerging) is a challenging tas
Publikováno v:
2018 4th IEEE International Conference on Emerging Electronics (ICEE).
Embedded non-volatile memory demand has increased manifolds in the recent time because it offers increased functionality and security for the systems. Microcontrollers, secure microprocessor need both advanced logic and NVM on the same die. Flash mem
Publikováno v:
2017 75th Annual Device Research Conference (DRC).
Internet of Things (IoT) requires chip level unique identification like a random binary barcode. For secure random binary barcode, a physically un-clonable function (PUF) is preferred over software which produces a random binary barcode based on fund
Publikováno v:
IndraStra Global.
We report a simple method of forming Ohmic contacts to n and p-type germanium (Ge) simultaneously using Au nanocrystals embedded in Ti contact metal. The electric field due to the work-function difference of Ti and Au reduces the tunneling resistance
Autor:
Anil Kottantharayil, Senthil Srinivasan, Sunny Sadana, Amit Gaur, Abhishek Kumar Misra, Satya Suresh, Mayur Waikar, Meenakshi Bhaisare
Publikováno v:
MRS Proceedings. 1288
We here present, metal nanocrystal (NC) formation statistics (size, density, occupancy or area coverage) on different high dielectric constant (high-K) materials which may be used as tunnel dielectric or intermetal dielectric in flash memory devices.