Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Sunny Chiang"'
Autor:
X. Zhang, Christopher J. Penny, J. Ren, O. van der Straten, Sunny Chiang, J. Maniscalco, Paul F. Ma
Publikováno v:
ECS Transactions. 50:159-164
The integration of dual damascene Cu metallization for features at and beyond ~30nm critical dimension (CD) is very challenging, and its success will likely depend on optimization to near perfection in every area, from uniform patterning profiles, hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8bb6c8671209019e9a881b7b00cd52e
https://doi.org/10.1149/05013.0159ecst
https://doi.org/10.1149/05013.0159ecst
Autor:
Ming He, Cathryn Christiansen, Kunaljeet Tanwar, Frieder H. Baumann, Patrick W. DeHaven, Samuel S. Choi, J. Rowland, T. Ryan, Hoon Kim, Leo Tai, A. Simon, Anita Madan, Donald F. Canaperi, Tibor Bolom, X. Zhang, Steven E. Molis, F. Ito, Akira Uedono, Philip L. Flaitz, C.-K. Hu, R. J. Davis, Daniel C. Edelstein, R. Murphy, Christopher Parks, Christopher J. Penny, Terry A. Spooner, James J. Kelly, James Chingwei Li, Sunny Chiang, Takeshi Nogami
Publikováno v:
2012 International Electron Devices Meeting.
Cu(Mn) alloy seed BEOL studies revealed fundamental insights into Mn segregation and EM enhancement. We found a metallic-state Mn-rich Cu layer under the MnOx layer at the Cu/SiCNH cap interface, and correlated this metallic layer with additional EM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b1ee2ead5d524ea8e6cbaf07bb70bf8
https://doi.org/10.1109/iedm.2012.6479161
https://doi.org/10.1109/iedm.2012.6479161
Autor:
M. Zaitz, Sunny Chiang, Samuel S. Choi, Terry A. Spooner, R. Murphy, A. Simon, Leo Tai, H. Chen, J. Ren, J. Fine, Kazumichi Tsumura, Patrick W. DeHaven, Takeshi Nogami, R. J. Davis, Vivian W. Ryan, Donald F. Canaperi, P. Kozlowski, B. St. Lawrence, J. Schmatz, Philip L. Flaitz, Tibor Bolom, Christopher Parks, Christopher J. Penny, Joseph F. Aubuchon, J. Maniscalco, Daniel C. Edelstein, Tuan A. Vo, Timothy M. Shaw, Paul F. Ma, James J. Kelly, S-H. Rhee, Oscar van der Straten, Anita Madan, B-Y. Kim, Cyril Cabral, C.-K. Hu, Stephan A. Cohen, Fuminori Ito
Publikováno v:
2010 IEEE International Interconnect Technology Conference.
Fundamental material interactions as pertinent to nano-scale copper interconnects were studied for CVD Co with a variety of micro-analytical techniques. Native Co oxide grew rapidly within a few hours (XPS). Incorporation of oxygen and carbon in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56aa40debcf55e562b1da16592cbfd47
https://doi.org/10.1109/iitc.2010.5510584
https://doi.org/10.1109/iitc.2010.5510584
Autor:
James Ren, James J. Kelly, M. Fujiwara, Takamasa Usui, Kazunari Ishimaru, Terry A. Spooner, Sunny Chiang, Tuan Vo, T. Watanabe, Mariko Takayanagi, Atsunobu Isobayashi, Charles W. Koburger, J. Maniscalco
Publikováno v:
2009 IEEE International Interconnect Technology Conference.
We have demonstrated the complete copper filling of contact structures at 32 nm- and 22 nm-node dimensions with the conventional PVD only Ta(N)/Cu barrier/seed process. Copper seed process was optimized to obtain the sufficient coverage of copper alo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72f876202ad36a9abfe6c2156fb72fdb
https://doi.org/10.1109/iitc.2009.5090325
https://doi.org/10.1109/iitc.2009.5090325
Autor:
Stefan J. Weber, L. Yang, G.Z. Lu, R.F. Schnabel, D. Tobben, Chenting Lin, J. L. Hurd, Sunny Chiang, R. Filippi, J. Ning, Kenneth P. Rodbell, T. Gou, R. Longo, M. Ronay, Roderick C. Mosely, L. Gignac, Mark Hoinkis, R. Ploessl, S. Voss, Clevenger Leigh Anne H, Jeffrey P. Gambino, Lian-Yuh Chen, G. Costrini, D.M. Dobuzinsky, J.F. Nuetzel, R. C. Iggulden
Publikováno v:
Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102).
As VLSI back end of line (BEOL) wiring is scaled to 0.175 /spl mu/m dimensions and sub-0.5 /spl mu/m pitches, the challenges to conventional Al RIE BEOL processes are the etching and the reliability of tall/narrow Al lines and the oxide gap fill and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5df924822bf795c7e3a2be9c96ec3aef
https://doi.org/10.1109/iitc.1998.704772
https://doi.org/10.1109/iitc.1998.704772
Autor:
Sunny Chiang, Jaim Nulman, Keith J. Hansen, Sesh Ramaswami, Murali Narasimhan, Murali Abburi, Vikram Pavate, Glen T. Mori, Daryl Restaino
Publikováno v:
SPIE Proceedings.
Increasing levels of metallization, shrinking device geometries, and stringent defect density requirements have led to a continuous focus in the semiconductor manufacturing community to reduce defects generated during metal deposition by PVD techniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::414c3b2e6e57fdb96a0bbb5767b3b406
https://doi.org/10.1117/12.304398
https://doi.org/10.1117/12.304398
Autor:
Sesh Ramaswami, Glen T. Mori, Daryl Restaino, Murali Abburi, Keith J. Hansen, Sunny Chiang, Vikram Pavate, Jaim Nulman, Murali Narasimhan
Publikováno v:
Multilevel Interconnect Technology.
Increasing levels of metallization, shrinking device geometries, and stringent defect density requirements have led to a continuous focus in the semiconductor manufacturing community to reduce defects generated during metal deposition by PVD techniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d305a8b3debdb8710c25e8ad893de7fd
https://doi.org/10.1117/12.284663
https://doi.org/10.1117/12.284663
Autor:
Jenn Min Lee, Kueih-Tzu Lu, Shi Wei Chen, Jyh-Fu Lee, Sunny Chiang, Mau Tsu Tang, Chih Wen Pao, Jin-Ming Chen, Yu Chia Liang, Shu Chih Haw
Publikováno v:
Journal of the Physical Society of Japan. 80:114706
The varied electronic structure of Ce-doped TiO 2 was probed with x-ray absorption spectra at O K -, Ce L -, Ti L -edge, and Ti K -edges. We expose the essential role of existed oxygen vacancies in band gap narrowing of Ce-doped TiO 2 and deduce the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ebafdbd80a15011920d3f9174d8cff4
https://doi.org/10.1143/jpsj.80.114706
https://doi.org/10.1143/jpsj.80.114706
Publikováno v:
MRS Proceedings. 260
High quality barriers of sputter deposited titanium nitride (TiN) are critical elements of advanced ULSI integrated circuits. We have examined the effect of eight variables on eight parameters which may affect device characteristics and the ability t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83bad98cf7cee3a30c104b6781591e13
https://doi.org/10.1557/proc-260-813
https://doi.org/10.1557/proc-260-813
Autor:
Qiang Huang, John Dukovic, Sunny Chiang, Xiaoyan Shao, James J. Kelly, O. van der Straten, Brett Baker O'Neal, Tuan Vo
Publikováno v:
ECS Meeting Abstracts. :1897-1897
The morphology of thin layers of Cu electrodeposited on 300 mm Ru substrates (deposited by plasma enhanced atomic layer deposition or PEALD) is studied. To reduce the terminal effect, a layer of physical vapor deposited (PVD) Cu is employed beneath t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41f49a071db6e7a32a18980b14d3b6f3
https://doi.org/10.1149/ma2008-02/24/1897
https://doi.org/10.1149/ma2008-02/24/1897