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Autor:
Sunkari, Swapna Geetha
Publikováno v:
Theses and Dissertations.
Film thickness, free carrier concentration and free carrier mobility are critical figures of merit for silicon carbide epitaxial growth. Room temperature Fourier Transform Infrared (FTIR) reflection spectroscopy can estimate these parameters non-dest
Externí odkaz:
https://scholarsjunction.msstate.edu/td/2640
https://scholarsjunction.msstate.edu/cgi/viewcontent.cgi?article=3639&context=td
https://scholarsjunction.msstate.edu/cgi/viewcontent.cgi?article=3639&context=td
