Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Sungsoo Suh"'
Autor:
Han-Ku Cho, Sung-Woo Lee, Young-Chang Kim, Kyoung-yoon Back, Suk-Joo Lee, Sungsoo Suh, Sang-Wook Kim
Publikováno v:
Microelectronic Engineering. 84:755-760
Use of off-axis illumination such as dipole and cross-pole to obtain minimum dense pitch resolution limits process margin due to side lobe defect pattern formation. Side lobe or ghost images are unwanted additional patterns formed at wafer image at c
Publikováno v:
SPIE Proceedings.
This paper presents an effective methodology for etch PPC (Process Proximity Correction) of 20 nm node DRAM (Dynamic Random Access Memory) gate transistor. As devices shrinks, OCV(On chip CD Variation) control become more important to meet the perfor
Autor:
Tom Cecil, Hyong-Euk Lee, M. J. Hong, Bob Gleason, Xin Zhou, Donghwan Son, David Irby, Guangming Xiao, Sooryong Lee, Sunhwa Jung, Sungsoo Suh, Woojoo Sim, Chris Ashton, David Kim, Lan Luan
Publikováno v:
SPIE Proceedings.
It is well known in the industry that the technology nodes from 30nm and below will require model based SRAF / OPC for critical layers to meet production required process windows. Since the seminal paper by Saleh and Sayegh[1][2] thirty years ago, th
Autor:
Tom Cecil, Chang-Jin Kang, Hyun-Jong Lee, Junghoon Ser, Christopher Ashton, David Kim, Xin Zhou, Guangming Xiao, Sung-Gon Jung, Donghwan Son, Seong-Woon Choi, Woojoo Sim, David Irby, Sungsoo Suh
Publikováno v:
SPIE Proceedings.
For low k1 lithography the resolution of critical patterns on large designs can require advanced resolution enhancement techniques for masks including scattering bars, complicated mask edge segmentation and placement, etc. Often only a portion of a l
Publikováno v:
SPIE Proceedings.
Many issues need to be resolved for a production-worthy model based assist feature insertion flow for single and double exposure patterning process to extend low k1 process at 193 nm immersion technology. Model based assist feature insertion is not t
Autor:
Joo-Tae Moon, Kyoil Koo, Woo-Sung Han, Sung-Gon Jung, Sung-Woon Choi, Young-Chang Kim, Suk-Joo Lee, Xiaohai Li, Sooryong Lee, Frank Amoroso, Sang-Wook Kim, Benjamin D. Painter, Levi D. Barnes, Munhoe Do, Sungsoo Suh, Robert Lugg
Publikováno v:
SPIE Proceedings.
Due to shrinking design nodes and to some limitations of scanners, extreme off-axis illumination (OAI) required and its use and implementation of assist features (AF) to solve depth of focus (DOF) problems for isolated features and specific pitch reg
Autor:
Suk-Joo Lee, Sungsoo Suh
Publikováno v:
SPIE Proceedings.
During early stage of a memory device development, photolithography engineer provide a lithography friendly layout to a designer and assist in development of design rule. Most of the cases, lithographer relies on the accuracy of lithography simulator
Autor:
Kyoil Koo, Sungsoo Suh, Young-Chang Kim, Suk-Joo Lee, Sang-Wook Kim, Yongjin Cheon, Jung-Hyeon Lee, Seong-Woon Choi, Sooryong Lee, Woo-Sung Han
Publikováno v:
Optical Microlithography XXI.
Optical proximity correction (OPC) of contact-hole printing is challenging since its two dimensional shapes requires through understanding of lithographic processes compared to one dimensional line and space pattering. Moreover, recently, it is commo
Autor:
Sungsoo Suh, Suk-Joo Lee, Tae-Hyuk Ahn, Robert Lugg, Woo-Seok Shim, Jung-Hyeon Lee, Chang-Jin Kang, Seok-Hwan Oh, Sooryong Lee, Frank Amoroso
Publikováno v:
SPIE Proceedings.
Many issues need to be overcome in creating a production-worthy sub-k1 (
Autor:
Yong-Jin Chun, Ho-Jin Park, Sungsoo Suh, Brad Falch, Young-Mi Lee, Suk-Joo Lee, Sung-Woo Lee, Sooryong Lee, Han-Ku Cho
Publikováno v:
SPIE Proceedings.
Several criteria are applied to optimize the best illumination and bias condition for a layer. Normalized image log-slope (NILS) and mask error enhancement factor (MEEF) are promising candidates to simply decide the optimized condition. NILS represen