Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Sungsam Lee"'
Autor:
Min Hee Cho, Namho Jeon, Taek Yong Kim, Moonyoung Jeong, Sungsam Lee, Jong Seo Hong, Hyeong Sun Hong, Satoru Yamada
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 494-499 (2018)
This paper is the first to propose an innovative method for measuring variations in dynamic random access memory (DRAM) cell transistors. Structural dispersion induces an extremely high cell leakage current, which determines aspects of DRAM performan
Externí odkaz:
https://doaj.org/article/617f2a67dd8f4191899b3f82860e9bd6
Autor:
null Hyungtak Kim, null Sangho Kim, null Sungsam Lee, null Sungho Jang, null Ji-hoon Kim, null Yangsoo Sung, J. Puk, null Saehan Kwon, null Sangmin Jun, null Wontae Park, null Daehan Han, null Changhyun Cho, null Yungi Kim, null Kinam Kim, null Byungil Ryu
Publikováno v:
IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)..
Autor:
Sungsam Lee, Jongchul Park, Kwangwoo Lee, Sungho Jang, Junho Lee, Hyunsook Byun, Ilgweon Kim, Yongjin Choi, Myoungseob Shim, Duheon Song, Joosung Park, Taewoo Lee, Dongho Shin, Gyoyoung Jin, Kinam Kim
Publikováno v:
ESSDERC 2007 - 37th European Solid State Device Research Conference; 2007, p327-329, 3p
Autor:
Changhyun Cho, Sangho Song, Sangho Kim, Sungho Jang, Sungsam Lee, Hyungtak Kim, Yangsoo Sung, Sangmin Jeon, Gisung Yeo, Youngsun Kim, Yungi Kim, Gyoyoung Jin, Kinam Kim
Publikováno v:
2005 Digest of Technical Papers. 2005 Symposium on VLSI Technology; 2005, p36-37, 2p
Autor:
Hyungtak Kim, Sangho Kim, Sungsam Lee, Sungho Jang, Ji-hoon Kim, Yangsoo Sung, Junwoong Park, Saehan Kwon, Sangmin Jun, Wontae Park, Daehan Han, Changhyun Cho, Yungi Kim, Kinam Kim, Byungil Ryu
Publikováno v:
IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech); 2005, p29-30, 2p