Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Sungnam Chang"'
Publikováno v:
Solid-State Electronics. 53:792-797
8-Level NAND flash memories with 51 nm design rule and 44-cell string floating gate technology have been successfully developed for the first time. 44-Cell string with floating poly silicon and tungsten silicide (WSi) gate structure reduced the cell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a624c55e57a536f78413e3edde7c0677
https://doi.org/10.1016/j.sse.2009.03.019
https://doi.org/10.1016/j.sse.2009.03.019
Autor:
Eun-Jung Lee, Byung-Gook Park, Gideok Kwon, Hyungcheol Shin, In Young Kim, Il Han Park, Sungnam Chang, Seunggun Seo, Kyungmi Bae, Daewoong Kang, Junghoon Lee, Jong Duk Lee, Jeong-Hyuk Choi
Publikováno v:
2008 IEEE Silicon Nanoelectronics Workshop.
Recently the cell integration density of NAND flash memory is increasing rapidly due to its simple structure suitable for high resolution lithography. Therefore, the reduction of cell size has been the most important issue. However, with the increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04099c76627015840c982e8e1443c09d
https://doi.org/10.1109/snw.2008.5418397
https://doi.org/10.1109/snw.2008.5418397
Autor:
Jong Duk Lee, Il Han Park, Byung-Gook Park, Seunggun Seo, Sangwoo Kang, Sungnam Chang, Yongwook Song, Hojin Yoon, Daewoong Kang, Wonseong Lee, Dongwon Chang, Eun-Jung Lee, Hyungcheol Shin
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
One of the most important issues of NAND flash memory is reliability problems caused by oxide and interface traps. But it has been revealed that their generation rate increases by Fowler-Nordheim current stressing on the tunnel oxide as the channel w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58fcf8417cd19b01f8337c18d7541ca8
https://doi.org/10.1109/relphy.2007.369996
https://doi.org/10.1109/relphy.2007.369996
Autor:
Jungjoo An, Jin-joo Kim, Wonseong Lee, Eun-Jung Lee, Kyongjoo Lee, Hyungcheol Shin, Eunsang Jeong, Daewoong Kang, Hyukje Kwon, Seunggun Seo, Sungnam Chang
Publikováno v:
2006 21st IEEE Non-Volatile Semiconductor Memory Workshop.
Recently the cell integration density of NAND flash memory increases rapidly due to its simple structure suitable for high resolution lithography. However as the cell integration density increases, NAND flash memory cell shows the problem of increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1fa65d4fd36a6e0241dbc95738c0f16
https://doi.org/10.1109/.2006.1629483
https://doi.org/10.1109/.2006.1629483
Publikováno v:
ESSDERC 2008 - 38th European Solid-State Device Research Conference; 2008, p111-114, 4p
Autor:
Daewoong Kang, Hyungcheol Shin, Sungnam Chang, Jungjoo An, Kyongjoo Lee, Jinjoo Kim, Eunsang Jeong, Hyukje Kwon, Eunjung Lee, Seunggun Seo, Wonseong Lee
Publikováno v:
2006 21st IEEE Non-Volatile Semiconductor Memory Workshop; 2006, p36-37, 2p
Autor:
Daewoong Kang, Sungnam Chang, Jung Hoon Lee, Il Han Park, Seunggun Seo, Gideok Kwon, Kyungmi Bae, Inyoung Kim, Eunjung Lee, Jeong-Hyuk Choi, Byung-Gook Park, Jong Duk Lee, Hyungcheol Shin
Publikováno v:
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE; 2008, p1-2, 2p
Autor:
Daewoong Kang, Sungnam Chang, Seungwon Yang, Eunjung Lee, Seunggun Seo, Jeong-Hyuk Choi, Byung-Gook Park, Jong Duk Lee, Hyungcheol Shin
Publikováno v:
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE; 2008, p1-2, 2p
Autor:
Daewoong Kang, Sungnam Chang, Seunggun Seo, Yongwook Song, Hojin Yoon, Eunjung Lee, Dongwon Chang, Wonseong Lee, Byung-Gook Park, Jong Duk Lee, Il Han Park, Sangwoo Kang, Hyungcheol Shin
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings 45th Annual; 2007, p652-653, 2p
Autor:
Kueber, William, Puzzilli, Giuseppina, Righetti, Niccolo, Basco, Ricardo, Li, Lin, Beltrami, Silvia, Bertuccio, Massimo, Camozzi, Elisa, Daycock, David, King, Matthew, Larsen, Chris, Karpan, Jeff, Goda, Akira, Roberts, Ceredig
Publikováno v:
2015 IEEE International Memory Workshop (IMW); 2015, p1-4, 4p