Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Sungmock Ha"'
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc52010dac70b870e221515897118e8f
https://doi.org/10.1109/irps48203.2023.10118277
https://doi.org/10.1109/irps48203.2023.10118277
Autor:
Sungmock Ha, Jongwoo Park, Hye-Jin Kim, Hyun-Jin Kim, Jinju Kim, Yoohwan Kim, Lira Hwang, Seungjin Choo, Minjung Jin, Changze Liu, Soonyoung Lee, Hyun Chul Sagong, Junekyun Park, Jungin Kim, Sungyoung Yoon, Sangwoo Pae, Kangjung Kim, Hyeonwoo Nam
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
Aging induced variability has been shaving away the design margins in advanced SRAM which may become more serious with highly scaled process node. This paper provides a systematical study of the BTI variation impacts in FinFET SRAM based on 14nm 128M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63dee6b834292e8680c78abc22023b7d
https://doi.org/10.1109/iedm.2015.7409675
https://doi.org/10.1109/iedm.2015.7409675
Autor:
Jinhyun Noh, Soonyoung Lee, Il-gon Kim, Sungmock Ha, Sangwoo Pae, Cheong-sik Yu, Jongwoo Park
Publikováno v:
IRPS
Radiation-induced Soft Error Rate (SER) of SRAM built in 14nm FinFET on bulk technology was extensively characterized. Two different SRAM cells, high-performance (HP) and high-density (HD), were irradiated with alpha particles, thermal neutrons, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75859055d0f45923a891357ea4c6d599
https://doi.org/10.1109/irps.2015.7112728
https://doi.org/10.1109/irps.2015.7112728