Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Sungmin Huh"'
Autor:
Chimaobi Mbanaso, Yunfei Wang, Yu-Jen Fan, Petros Thomas, Sungmin Huh, Alin Antohe, Ken Goldberg, Leonid Yankulin, Patrick P. Naulleau, Gregory Denbeaux, Iacopo Mochi, Andrea Wüest, Rashi Garg, Frank Goodwin
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:321-328
Carbon contamination is a significant issue with extreme ultraviolet (EUV) masks because it lowers throughput and has potential effects on imaging performance. Current carbon contamination research is primarily focused on the lifetime of the multilay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fe180492ee0836a6d996aa737333861
https://doi.org/10.1116/1.3333434
https://doi.org/10.1116/1.3333434
Autor:
Seno Rekawa, Patrick P. Naulleau, Kenneth A. Goldberg, Hak-Seung Han, C. D. Kemp, Iacopo Mochi, Sungmin Huh, E. H. Anderson, R. F. Gunion
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2220-2224
The SEMATECH Berkeley actinic inspection tool (AIT) is an extreme ultraviolet (EUV)-wavelength mask inspection microscope designed for direct aerial image measurements and precommercial EUV mask research. Operating on a synchrotron bending magnet bea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60d8455c429749df51f77a50ecbf3f4f
https://doi.org/10.1116/1.3002490
https://doi.org/10.1116/1.3002490
Autor:
Hwan-Seok Seo, Dong-Gun Lee, Han-Ku Cho, Byung-Sup Ahn, Eric M. Gullikson, Sungmin Huh, Seong-Sue Kim, Hak-Seung Han, Hoon Kim, Dong Wan Kim
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2208-2214
In this paper, the authors present the results of an investigation of the dependence of mask absorber thickness on the extreme ultraviolet lithography (EUVL) and suggest a new mask structure to minimize shadowing effects. For this purpose, several pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::552a020c83931ce5653d220018aee2a3
https://doi.org/10.1116/1.3002488
https://doi.org/10.1116/1.3002488
Autor:
Danping Peng, Ying Li, Ranganath Teki, Il-Yong Jang, Vibhu Jindal, Sungmin Huh, Masaki Satake, Frank Goodwin, Seong-Sue Kim
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
We describe the printability of native phase defects categorized by type and dimension using NXE3100 EUV scanner and DPS (Defect Printability Simulator) software developed by Luminescent Technologies. The critical dimension (CD) error on wafers simul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4806e50ec82886bd32cd7c4740741b8
https://doi.org/10.1117/12.2011493
https://doi.org/10.1117/12.2011493
Autor:
Dong Ryul Lee, Gregg Inderhees, Chan-Uk Jeon, Jinho Ahn, Jihoon Na, In Yong Kang, Jonggul Doh, Chang Young Jeong, Seong Sue Kim, Sungmin Huh, Hwan Seok Seo
Publikováno v:
SPIE Proceedings.
The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. Recently both blank suppliers achieved 1-digit number of defects at 60nm in size using their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::819ace1f1ad30342cbd54805b1dd4ac7
https://doi.org/10.1117/12.916021
https://doi.org/10.1117/12.916021
Autor:
Sungmin Huh, Tae-Geun Kim, Hwan-Seok Seo, Seong-Sue Kim, Chang Young Jeong, In-Yong Kang, Kenneth A. Goldberg, Chan-Uk Jeon, Jihoon Na, Iacopo Mochi
Publikováno v:
SPIE Proceedings.
Amplitude defects (or absorber defects), which are located in absorber patterns or multilayer surface, can be repaired during mask process while phase defects (or multilayer defects) cannot. Hence, inspection and handling of both defects should be se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d620ee548e63e43d44ff2b94176f2996
https://doi.org/10.1117/12.916052
https://doi.org/10.1117/12.916052
Autor:
Sungmin Huh, Ken Goldberg, Gregg Inderhees, Hwan-Seok Seo, Dongwan Kim, Seong-Sue Kim, Han-Ku Cho, Joo-On Park, Sang-Hyun Kim, Tsutomu Shoki, In-Yong Kang, Iacopo Mochi
Publikováno v:
SPIE Proceedings.
The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing, yet little data is available for understanding native defects on real masks. In this paper, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc948daa09482ce892826c0c3762a84c
https://doi.org/10.1117/12.879384
https://doi.org/10.1117/12.879384
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
We demonstrated the electrical evolution of the AlO, AlN, and AlON and the nitrogen (N) effect on negative fixed charges, which is responsible for the reduced positive charge traps of Al 2 O 3 passivation films in crystalline Si solar cells. The AlO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77bf6165da9f75a001b21cb55d7604e2
https://doi.org/10.1109/pvsc.2010.5614520
https://doi.org/10.1109/pvsc.2010.5614520
Autor:
Iacopo Mochi, Sang-In Han, Joo-On Park, Sungmin Huh, Byung-Sup Ahn, Stefan Wurm, Toshio Nakajima, Liping Ren, Ken Goldberg, David Chan, Kyoungyong Cho, Masahiro Kishimoto, Thomas Laursen, In-Yong Kang
Publikováno v:
SPIE Proceedings.
The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing, yet little data is available for understanding native defects on real masks. In this paper, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c726be4fe0a2af6e3ff59d55df5d7236
https://doi.org/10.1117/12.846922
https://doi.org/10.1117/12.846922
Autor:
Thomas Murray, Patrick P. Naulleau, Iacopo Mochi, Chimaobi Mbanaso, Sungmin Huh, Gregory Denbeaux, Rashi Garg, Andrea Wüest, Yunfei Wang, Ken Goldberg, Frank Goodwin, Yu-Jen Fan, Aaron Cordes, Petros Thomas, Eric M. Gullikson, Alin Antohe, Leonid Yankulin
Publikováno v:
SPIE Proceedings.
The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance. Current carbon contamination research primarily focuses on the lifetime of the multilayer surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a7e000a21852f49a20356d6b07361b0
https://doi.org/10.1117/12.846996
https://doi.org/10.1117/12.846996