Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Sungman Rhee"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 213-222 (2020)
We extended the density-gradient (DG) model to include a second-order quantum correction (SOQC) term. The DG model has been widely used as a device simulation model capable of simulating quantum effects in efficient way. However, when only the first
Externí odkaz:
https://doaj.org/article/ad2b12677b184d1187882fcc39e4f9c7
Autor:
Sungman Rhee, Hyunjin Kim, Sangku Park, Taiki Uemura, Yuchul Hwang, Seungjin Choo, Jinju Kim, Hwasung Rhee, Shinyoung Chung
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd1ae2da3bcc4160d771a959855311dd
https://doi.org/10.1109/irps48203.2023.10117962
https://doi.org/10.1109/irps48203.2023.10117962
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 213-222 (2020)
We extended the density-gradient (DG) model to include a second-order quantum correction (SOQC) term. The DG model has been widely used as a device simulation model capable of simulating quantum effects in efficient way. However, when only the first
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::965992e20ea5b1b488c5ec90886bff28
https://ieeexplore.ieee.org/document/8981987/
https://ieeexplore.ieee.org/document/8981987/
A Mobility Model for Random Discrete Dopants and Application to the Current Drivability of DRAM Cell
Publikováno v:
IEEE Transactions on Electron Devices. 64:4246-4251
A new impurity mobility model suitable for the TCAD simulation of the random discrete dopant (RDD) has been proposed. The proposed model has been applied to the DRAM cell transistor of the 20-nm technology generation. The RDD effect in the drain regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc0ceef639b91356dbada75f759f289f
https://doi.org/10.1109/ted.2017.2741968
https://doi.org/10.1109/ted.2017.2741968
Publikováno v:
IEEE Transactions on Electron Devices. 64:2113-2120
An analytical model for the bulk trap charge-induced threshold voltage variation in the intrinsic channel MOSFET is presented. A new definition of the flat band voltage, the gate voltage necessary to nullify the gate charge, which is induced by the b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e3442686f0309c09fcf19e62a0a73a0
https://doi.org/10.1109/ted.2017.2686588
https://doi.org/10.1109/ted.2017.2686588
Publikováno v:
Solid-State Electronics. 113:144-150
Non-Arrhenius behavior has been reported in a various temperature range for the retention time of CT Flash memories. In order to understand the physical origin of the multiple activation energy due to the non-Arrhenius behavior, we conduct a simulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1aef44234be91e3bca8ca048c77eb36b
https://doi.org/10.1016/j.sse.2015.05.026
https://doi.org/10.1016/j.sse.2015.05.026
Publikováno v:
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
As a source of the tail of the statistical distribution of MOSFET threshold voltage distributions, we identified how the potential chain extending from one width edge of the channel to the other width edge creates an abnormally large V T shift, using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e77d8378870dd2ffc46e85760c00e474
https://doi.org/10.1109/sispad.2015.7292339
https://doi.org/10.1109/sispad.2015.7292339
Publikováno v:
ESSDERC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0230b49bad2ffd23f5930d0aa84c34b
https://doi.org/10.1109/essderc.2014.6948755
https://doi.org/10.1109/essderc.2014.6948755