Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Sungkyu Yu"'
Autor:
Seunghee Hong, Seung-Chul Chon, Se-Jin Park, Sunjin Kim, Sungkyu Yu, Damee Kim, Kang Hee Cho, Hongkyu Park, Jaehak Yu
Publikováno v:
2019 International Conference on Platform Technology and Service (PlatCon).
In particular, stroke is a major disease leading to death in adults and elderly people, as well as disability. Rapid detection of stroke is very difficult because the cause and cause of the onset are different for each individual. In this paper, we d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6382f14b271ee68e77f3bc0f8ecd4783
https://doi.org/10.1109/platcon.2019.8668961
https://doi.org/10.1109/platcon.2019.8668961
Autor:
Viswanath, A. Kasi, Shin, Eun-joo, Joo In Lee, Sungkyu Yu, Dongho Kim, Baeyong Kim, Yoonho Choi, Chang-Hee Hong
Publikováno v:
Journal of Applied Physics; 2/15/1998, Vol. 83 Issue 4, p2272, 4p, 1 Chart, 6 Graphs
Publikováno v:
IEEE Transactions on Advanced Packaging. 25:459-466
For the first time, the picosecond electric-pulse propagation characteristics of a few coplanar waveguide (CPW) components, including transmission lines, capacitive open and short terminations and a right-angle bend, have been successfully measured b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b9f8197d94adf7af34f4b6eae1e1fbf
https://doi.org/10.1109/tadvp.2002.806801
https://doi.org/10.1109/tadvp.2002.806801
Autor:
Joo In Lee, Eunsoon Oh, T.I Kim, Sungkyu Yu, Okhyun Nam, C. Sone, Y.J Yu, Eun-joo Shin, P.W Yu, Mee-Yi Ryu, Yongjo Park
Publikováno v:
Solid State Communications. 116:675-678
We have studied the effects of Si doping on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N multiple quantum wells (MQWs) by photoluminescence (PL) and time-resolved PL measurements. As increasing Si doping in the barriers, the PL shows an in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b66a098df3f4fde206ac502890ef2a3
https://doi.org/10.1016/s0038-1098(00)00410-5
https://doi.org/10.1016/s0038-1098(00)00410-5
Publikováno v:
Journal of Applied Physics. 86:3159-3164
We experimentally demonstrate that the temporal shape of the four-wave mixing (FWM) signal in thick semiconductors is significantly influenced by the absorption of the generated FWM signal during its propagation through the sample as well as the puls
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b4d5997ef5f025f37c32ce1f7cb181b
https://doi.org/10.1063/1.371183
https://doi.org/10.1063/1.371183
Magneto-optical spectroscopy of modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells
Autor:
Sungkyu Yu, Gukhyung Ihm, Joo In Lee, Hyung Gyoo Lee, Annamratu Kasi Viswanath, Kyu-Seok Lee, Eun-joo Shin
Publikováno v:
Solid State Communications. 110:633-638
We have presented the magneto-optical studies of modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells. The transition energies of two asymmetric quantum wells are in good agreement with those obtained from a self-consistent calculatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f247a540b183ae63d18cbf9ce351b2b
https://doi.org/10.1016/s0038-1098(99)00126-x
https://doi.org/10.1016/s0038-1098(99)00126-x
Publikováno v:
Journal of Applied Physics. 84:3848-3859
GaN epitaxial layers on sapphire substrates were grown by the rotating disk metal organic chemical vapor deposition technique. Excitonic transitions from conduction band to spin-orbit split valence bands were observed. At 12 K we observed donor bound
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3659b0d7ab33a7683007439f78e9ea7b
https://doi.org/10.1063/1.368564
https://doi.org/10.1063/1.368564
Autor:
Chang-Hee Hong, Eun-joo Shin, Joo In Lee, Baeyong Kim, A. Kasi Viswanath, Yoonho Choi, Sungkyu Yu, Dongho Kim
Publikováno v:
Journal of Applied Physics. 83:2272-2275
Magnesium doped GaN epitaxial layers were grown by metal-organic chemical vapor deposition on sapphire substrate. Energy levels of these acceptors were investigated by systematic photoluminescence measurements in the temperature range of 12–300 K.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aee4084a79d39b6468557647046d801
https://doi.org/10.1063/1.366985
https://doi.org/10.1063/1.366985
Autor:
Eun-joo Shin, Joo In Lee, Gukhyung Ihm, Dongho Kim, Sungkyu Yu, Hyung Gyoo Lee, Kasi Viswanath
Publikováno v:
Materials Science and Engineering: B. 51:122-126
We present the optical properties of modulation-doped InAs/GaAs quantum dots (QDs). Bandgap renormalization is clearly observed from a red shift of the emission peaks on the QDs with various modulation-doping concentrations, demonstrating that exchan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d8c494220d9e6455e9ffd24a42f95d2
https://doi.org/10.1016/s0921-5107(97)00244-4
https://doi.org/10.1016/s0921-5107(97)00244-4
Publikováno v:
Journal of Applied Physics. 81:6928-6933
Rather strong third- and fifth-order four-wave mixing (FWM) signals from a 500 μm thick undoped GaAs and a 350 μm thick undoped InP in detuning ranges of 80–170 meV below the band gap are observed. The spectrally resolved (SR) FWM signals for bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4be736cd79a77821bebbea3a1478c81b
https://doi.org/10.1063/1.365237
https://doi.org/10.1063/1.365237