Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Sungkwon Lee"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:1400-1410
The dynamic random access memory (DRAM) disturb known as rowhammer (RH) has come to dominate the insecurity of computing systems worldwide. Several studies have concentrated on electron injection from a switching cell select transistor and capture by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3549e1bdcc7ba79ecb2fc6d040123ef0
https://doi.org/10.1109/ted.2021.3060362
https://doi.org/10.1109/ted.2021.3060362
Autor:
Sungkwon Lee, Klaus-Jürgen Bathe
Publikováno v:
Advances in Engineering Software. 173:103241
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baaf7f98917a4137ff2182151f874dfc
https://doi.org/10.1016/j.advengsoft.2022.103241
https://doi.org/10.1016/j.advengsoft.2022.103241
Autor:
Sungkwon Lee, Klaus-Jürgen Bathe
Publikováno v:
Computers & Structures. 268:106813
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ae3f4dc2774d7d0d27dea323718f232
https://doi.org/10.1016/j.compstruc.2022.106813
https://doi.org/10.1016/j.compstruc.2022.106813
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:053009
In this paper, changes in transfer characteristics for an Al-doped SnO2 thin film using the annealing process was studied. Generally, as-deposited SnO2 thin film has electrical properties similar to those of the conductor due to high carrier concentr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::022cee26b47ee73c51fe2f6435a1ae84
https://doi.org/10.1149/2162-8777/ac6d74
https://doi.org/10.1149/2162-8777/ac6d74
Autor:
Jaehoon Sun, Sungkwon Lee
Publikováno v:
ICISA
Owing to digitization of information and e-commerce, various sectors like public, financial and private sectors are using a great number of personal information, and incidents caused by sensitive information leakage tend to be increased everyday. Tho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9be8bbd428e10874d7c33cb3f8393677
https://doi.org/10.1109/icisa.2013.6579420
https://doi.org/10.1109/icisa.2013.6579420
Autor:
Kaveh Shakeri, P. C. Shih, Y. K. Sheu, J. H. Gau, C. C. Huang, Venkatraman Prabhakar, S. H. Wu, Krishnaswamy Ramkumar, H. C. Lee, Igor G. Kouznetsov, H. M. Shih, Sam Geha, Srikanta Samanta, Sungkwon Lee, Y. Yang, Xiaojun Yu, Long T Hinh
Publikováno v:
2013 5th IEEE International Memory Workshop.
A novel low cost, eNVM technology is presented which has the lowest program/erase voltage reported to date. It is based on the integration of a SONOS based NVM module into a foundry CMOS process with only 3 additional masks and no additional HV oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce0fe263cccae45b0d9173e8bc957c88
https://doi.org/10.1109/imw.2013.6582134
https://doi.org/10.1109/imw.2013.6582134
Autor:
E. Landhal, Rachel Goldman, Sungkwon Lee, David A. Reis, David Fritz, Donald A. Walko, Yu-Miin Sheu
Publikováno v:
2007 Conference on Lasers and Electro-Optics - Pacific Rim.
We present time resolved X-ray diffraction (TRXD) experiments on the transport of a coherent acoustic wave-packet and nonlinear carrier relaxation processes across the nearly ideal AlGaAs/GaAs interface. A femtosecond laser impulsively excites the un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a33b20882f617363f8f08e7541c8a5b2
https://doi.org/10.1109/cleopr.2007.4391239
https://doi.org/10.1109/cleopr.2007.4391239
Publikováno v:
Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
We present the integration, device fabrication as well as a reliability analysis of 36 V drain extended CMOS transistors into a 0.35 CMOS baseline technology by utilizing the existing implants and adding 2 additional masking layers. Breakdown voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b06439a342b790c27615fbaf063b6b8e
https://doi.org/10.1109/ispsd.2007.4294967
https://doi.org/10.1109/ispsd.2007.4294967
Publikováno v:
Proceedings of the 19th International Symposium on Power Semiconductor Devices & IC's; 2007, p201-204, 4p
Conference
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