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pro vyhledávání: '"Sungkil Cho"'
Autor:
Choon Hwan Kim, Hyoungsub Kim, Seongheum Choi, Yunseok Kim, Eunjung Ko, Jinyong Kim, Minhyeong Lee, Sungkil Cho, Dae Hong Ko, Juyun Choi, Il Cheol Rho
Publikováno v:
Microelectronic Engineering. 165:1-5
As a future-generation source/drain contact structure, NiSi films were formed on a strained and epitaxial Si:P layer (P concentration of ~ 1.9 at.%), and their unique microstructural properties were characterized as a function of the annealing temper