Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Sungki Park"'
Autor:
SungKi Park, AnSu Lee
Publikováno v:
Korean Society For The Study Of Physical Education. 28:79-98
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6ed98f5755985ec6ec6ec7b1f626429
https://doi.org/10.15831/jksspe.2023.28.1.79
https://doi.org/10.15831/jksspe.2023.28.1.79
Publikováno v:
Human Movement Science. 66:198-208
The present study investigated the neural mechanisms of self-controlled (SC) feedback underlying its learning advantages. Forty-two participants, including 24 females (16.43 ± 2.61 years) and 18 males (17.56 ± 0.86 years), were randomly assigned to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6910d52a3e844bf812214c4f4a9fdc5
https://doi.org/10.1016/j.humov.2019.04.009
https://doi.org/10.1016/j.humov.2019.04.009
Publikováno v:
International Journal of Highway Engineering. 21:77-85
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aadf499f5aa859f2a6ad055a940ed143
https://doi.org/10.7855/ijhe.2019.21.3.077
https://doi.org/10.7855/ijhe.2019.21.3.077
Publikováno v:
Springer Series in Geomechanics and Geoengineering ISBN: 9783319996691
This study is a development of road system applying solar panels to road pavement block. Concrete pavement block to mount solar panel is designed to verify effective of power generation. Pavement blocks with solar panels is photovoltaic block that en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dabbf26ef6ef986e046906f7ef2f0a31
https://doi.org/10.1007/978-3-319-99670-7_11
https://doi.org/10.1007/978-3-319-99670-7_11
Autor:
Hyungsuk Seo, Myoung-Soo Kim, Changil Oh, Junggun Heo, Sungki Park, Cheol-Kyu Bok, Jiil Kim, Kwanggu An
Publikováno v:
Journal of Photopolymer Science and Technology. 26:595-598
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38055734e11aba3403193ed4b4a99d0d
https://doi.org/10.2494/photopolymer.26.595
https://doi.org/10.2494/photopolymer.26.595
Autor:
Dae-Gyu Shin, ChangHee Shin, Seiichi Aritome, Beom-Yong Kim, Sung-Joo Hong, Kwon Hong, MinSoo Kim, SangMoo Choi, Sung-Jin Whang, Ji-Hye Han, JinHo Bin, Young-Kyun Jung, Sungki Park, Ki-hong Lee, Kim Sungjun, BoMi Lee, Sung-Yoon Cho, Hyun-Seung Yoo
Publikováno v:
Solid-State Electronics. 79:166-171
A novel three-dimensional (3D) Dual Control gate with Surrounding Floating gate (DC-SF) NAND flash cell has been successfully developed. The DC-SF cell consists of a surrounding floating gate with stacked dual control gates. With this structure, high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a361cc6a29d653f09ec85f28c71fab86
https://doi.org/10.1016/j.sse.2012.07.005
https://doi.org/10.1016/j.sse.2012.07.005
Autor:
Sungki Park, Yong Soo Kim, Heonho Kim, Moon-Su Kim, Sook Joo Kim, Min Gyu Sung, Hak-Soon Choi, Ii-Kyo Jeong
Publikováno v:
Solid-State Electronics. 69:22-26
Ideal barrier metal arrangements in tungsten dual poly-metal (W/barrier metals/dual poly-Si) gates were developed for high performance, low-power and high density-memory devices. An additional metallic amorphous layer, such as TiN/WSix/WN, inserted a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::894e3893d27ea0310d3693f2a6d23921
https://doi.org/10.1016/j.sse.2011.09.003
https://doi.org/10.1016/j.sse.2011.09.003
Autor:
Jae-Sung Roh, Ji-Hoon Ahn, Jin-Hyock Kim, Sungki Park, Deok-Sin Kil, Ja-Yong Kim, Se-Hun Kwon
Publikováno v:
Journal of The Electrochemical Society. 159:H560-H564
Ru films were produced by atomic layer deposition (ALD) with an alternating supply of bis(ethylcyclopentadienyl)ruthenium (Ru(EtCp)2) and ozone at deposition temperatures of 225‐275 ◦ C. Ozone acted as an effective reactant for Ru(EtCp)2 .T he Ru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64d4d2f62317eb90a0f11ca1aa9e98e5
https://doi.org/10.1149/2.069206jes
https://doi.org/10.1149/2.069206jes
Autor:
Youngseok Kwon, Jin-hyock Kim, Sujin Chae, Youngho Lee, Soo Gil Jachun, Jachun Ku, Yongsun Sohn, Sungki Park, Deuk-Sung Choi, Jaechul Om
Publikováno v:
Journal of the Korean Physical Society. 59:466-469
We investigated the influence of phase-change materials on the device performance for low-power and high-speed phase-change random access memory (PCRAM). The Ge-doped SbTe (Ge-ST) alloy was used as a phase-change material and was compared with the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::000077f48f3aa2c741d33a666e4a3f2b
https://doi.org/10.3938/jkps.59.466
https://doi.org/10.3938/jkps.59.466
Publikováno v:
Solid-State Electronics. 54:650-653
We developed ultra-low resistive tungsten dual polymetal (W/barrier metal/dual poly-Si) gate technology suitable for a high performance and high density dynamic random access memory (DRAM) device by using a Ti-based diffusion barrier and a unique tun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9383687f3ca0b9d80874168b129fcd53
https://doi.org/10.1016/j.sse.2010.03.001
https://doi.org/10.1016/j.sse.2010.03.001