Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Sungjae Chang"'
Autor:
Sujin Kim, Yunkwon Nam, Min-jeong Kim, Seung-hyun Kwon, Junhyeok Jeon, Soo Jung Shin, Soyoon Park, Sungjae Chang, Hyun Uk Kim, Yong Yook Lee, Hak Su Kim, Minho Moon
Publikováno v:
Journal of Ginseng Research, Vol 47, Iss 2, Pp 302-310 (2023)
Background: The most common type of dementia, Alzheimer's disease (AD), is marked by the formation of extracellular amyloid beta (Aβ) plaques. The impairments of axons and synapses appear in the process of Aβ plaques formation, and this damage coul
Externí odkaz:
https://doaj.org/article/4df96c8f209942d4988e9f92c8eb1055
Autor:
Isaac Sungjae Chang, Susanna Mak, Narges Armanfard, Jennifer Boger, Sherry L. Grace, Amaya Arcelus, Caroline Chessex, Alex Mihailidis
Publikováno v:
IEEE Journal of Translational Engineering in Health and Medicine, Vol 8, Pp 1-11 (2020)
A ballistocardiogram (BCG) is a versatile bio-signal that enables ambient remote monitoring of heart failure (HF) patients in a home setting, achieved through embedded sensors in the surrounding environment. Numerous methods of analysis are available
Externí odkaz:
https://doaj.org/article/d77df3b33f0045c1a000a10089c6170e
Autor:
Sungjae Chang, Dong-Seok Kim, Kyu Jun Cho, Young-Ho Bae, Hokyun Ahn, Hyung Sup Yoon, Yoo-Jin Jang, Sung-Bum Bae, Byoung-Gue Min, Jong-Won Lim, Hyun-Wook Jung, Dong Min Kang, Jeong Jin Kim, Haecheon Kim
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q245-Q248
Autor:
Hokyun Ahn, Jong-Won Lim, Haecheon Kim, Sungjae Chang, Sang-Youl Lee, Hyun-Wook Jung, Hwan-Hee Jeong, Il-Gyu Choi, Jae-Hoon Lee, Kyu-Jun Cho, Sung-Bum Bae
Publikováno v:
Crystals; Volume 11; Issue 11; Pages: 1414
Crystals, Vol 11, Iss 1414, p 1414 (2021)
Crystals, Vol 11, Iss 1414, p 1414 (2021)
We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the subs
Autor:
Maryline Bawedin, M. Cheralathan, Jong-Hyun Lee, Burhan Bayraktaroglu, Sorin Cristoloveanu, Sungjae Chang, Jung-Hee Lee, Benjamin Iniguez
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2013, 90, pp.134-142. ⟨10.1016/j.sse.2013.02.040⟩
Repositori Institucional de la Universitat Rovira i Virgili
Consejo Superior de Investigaciones Científicas (CSIC)
Solid-State Electronics, Elsevier, 2013, 90, pp.134-142. ⟨10.1016/j.sse.2013.02.040⟩
Repositori Institucional de la Universitat Rovira i Virgili
Consejo Superior de Investigaciones Científicas (CSIC)
10.1016/j.sse.2013.02.040 Transport mechanisms in nanocrystalline ZnO Thin Film Transistors (TFT) were investigated in a wide temperature range. The channel is located at the ZnO-SiO2 interface and controlled with a bottom gate as in a back-channel S
Autor:
Jong-Hyun Lee, Sungjae Chang, Maryline Bawedin, Wade Xiong, Sorin Cristoloveanu, Jung-Hee Lee
Publikováno v:
INFOS 2013
INFOS 2013, Jun 2013, Cracow, Poland. pp.6.2
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2013, 109, pp.330-333. ⟨10.1016/j.mee.2013.03.049⟩
INFOS 2013, Jun 2013, Cracow, Poland. pp.6.2
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2013, 109, pp.330-333. ⟨10.1016/j.mee.2013.03.049⟩
Advanced FinFETs are fabricated on the ONO buried insulator.The nitride buried insulator can trap charges for the flash memory operation.The same device was investigated for the 1T-DRAM operation.By combining nonvolatile and volatile, multi-bit 1T-DR
Publikováno v:
Microelectronic Engineering. 88:1203-1206
Advanced FinFETs fabricated on SiO"2-Si"3N"4-SiO"2 (ONO) buried insulator are investigated for flash memory applications. Systematic measurements reveal that the Si"3N"4 layer can easily trap charges by applying appropriate drain bias. The amount of
Autor:
Matteo Valenza, Sungjae Chang, Sorin Cristoloveanu, Maryline Bawedin, Jong-Hyun Lee, Frédéric Martinez
Publikováno v:
219th ECS Meeting
219th ECS Meeting, 2011, Montreal, Canada. pp.103-108, ⟨10.1149/1.3570783⟩
219th ECS Meeting, 2011, Montreal, Canada. pp.103-108, ⟨10.1149/1.3570783⟩
The density of traps at the top interface is difficult to assess in advanced SOI MOSFETs with high-K dielectric and ultrathin film. Searching for a characterization strategy, we compare various approaches: front-channel subthreshold slope, back-chann
Publikováno v:
ECS Transactions. 35:79-84
FinFETs fabricated on SiO2-Si3N4-SiO2 (ONO) buried insulator are investigated for flash memory application. The Si3N4 layer can trap charges by tunneling at high back-gate bias. The amount of trapped charges is sensed, via gate coupling effects, by t
Publikováno v:
Frontiers in Electronics
Ed. by S. Cristoloveanu and M.S. Shur. Frontiers in Electronics, 55, World Scientific, pp.75-94, 2014, Selected Topics in Electronics and Systems, 978-981-4651-76-9
International Journal of High Speed Electronics and Systems
International Journal of High Speed Electronics and Systems, World Scientific Publishing, 2014, 23 (03-04), pp.1450019. ⟨10.1142/S0129156414500190⟩
Ed. by S. Cristoloveanu and M.S. Shur. Frontiers in Electronics, 55, World Scientific, pp.75-94, 2014, Selected Topics in Electronics and Systems, 978-981-4651-76-9
International Journal of High Speed Electronics and Systems
International Journal of High Speed Electronics and Systems, World Scientific Publishing, 2014, 23 (03-04), pp.1450019. ⟨10.1142/S0129156414500190⟩
Floating-body-induced transient mechanism in advanced FinFETs was investigated for unified and multi-bit memory capability. Nonvolatile memory operation was achieved by modifying the SOI buried insulator (BOX) such as the SiO 2- Si 3 N 4- SiO 2 (ONO)