Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Sunghoi Hur"'
Autor:
Jin-kyu Kang, Jaeduk Lee, Yongsik Yim, Sejun Park, Hyun Suk Kim, Eun Suk Cho, Taehun Kim, Jung Hoon Lee, Joon Kim, Raeyoung Lee, Junhee Lim, Sunghoi Hur, Su Jin Ahn, Jaihyuk Song
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Autor:
Chang-Sub Lee, Du-Heon Song, Sunghoi Hur, Jung-Hyuk Choi, Dongjun Lee, Chi-Woo Lee, Chungje Na, Byoungdeog Choi
Publikováno v:
IEEE Transactions on Electron Devices. 62:2940-2944
In this paper, the degradation characteristics of high-voltage (HV) p-type MOSFETs are investigated during negative unipolar ac stress on the gate electrode. The threshold voltage under ac stress is shifted gradually by both the negative-bias tempera
Publikováno v:
ECS Meeting Abstracts. :1872-1872
We investigated the degradation characteristics of High-voltage (HV) P-type Metal-oxide-semiconductor field effect transistors (P-MOSFETs) during negatively AC stress. The threshold voltage is shifted by degradation during the highly-negative gate bi
Autor:
Byungkyu Cho, ChangHyun Lee, Kwangsoo Seol, Sunghoi Hur, Jungdal Choi, Jeonghyuk Choi, Chilhee Chung
Publikováno v:
2011 3rd IEEE International Memory Workshop (IMW); 2011, p1-4, 4p
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM); 2009, p1-4, 4p
A new floating gate cell structure with a silicon-nitride cap layer for sub-20 nm NAND flash memory.
Autor:
Kwang Soo Seol, Heesoo Kang, Jaeduk Lee, Hyunsuk Kim, Byungkyu Cho, Dohyun Lee, Yong-Lack Choi, Nok-Hyun Ju, Changmin Choi, SungHoi Hur, Jungdal Choi, Chilhee Chung
Publikováno v:
2010 Symposium on VLSI Technology (VLSIT); 2010, p127-128, 2p
Publikováno v:
2014 IEEE International Electron Devices Meeting; 2014, p00.4-14.5.4, 0p