Zobrazeno 1 - 4
of 4
pro vyhledávání: '"SungLin Tsai"'
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Autor:
Kuniyuki Kakushima, Takuya Hoshii, Junji Kataoka, SungLin Tsai, Hitoshi Wakabayashi, Kazuo Tsutsui
Publikováno v:
Applied Physics Express (APEX). :21002
N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films was verified by Si ion implantation followed by activation annealing. The activation of dopants was found above an annealing temperature of 800 °C. Under a dose of 2 × 1015
Publikováno v:
ECS Meeting Abstracts. :1359-1359
Ferroelectric materials have been utilized for non-volatile memory applications [1]. Beside extensive works on ferroelectric HfO2 thin film [2, 3], recent works on nitride-based materials have proven that AlxSc1-xN (ASN) also shows ferroelectricity w
Autor:
Hitoshi Wakabayashi, Takuya Hoshii, Kuniyuki Kakushima, Kazuki Kusafuka, SungLin Tsai, Kazuo Tsutsui
Publikováno v:
ECS Meeting Abstracts. :1314-1314
Ferroelectric materials have been utilized for non-volatile memory applications [1]. Beside extensive works on ferroelectric HfO2 thin film [2, 3], recent works on nitride-based materials have proven that AlxSc1-xN (ASN) also shows ferroelectricity w