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pro vyhledávání: '"Sung-Woong Na"'
Publikováno v:
Japanese Journal of Applied Physics. 44:5811
The dry etching characteristics of the TaN/HfO2 gate stack structure using Cl2/Ar, Cl2/SF6/Ar and Cl2/SF6/O2/Ar inductively coupled plasmas (ICPs) were investigated and the etch rates of the TaN and HfO2 layers and TaN/HfO2 etch rate selectivities we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70e7d5384963217bb22f4b5cae1e6644
https://doi.org/10.1143/jjap.44.5811
https://doi.org/10.1143/jjap.44.5811
