Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Sung-Woong Chung"'
Autor:
Neung-Kyung Yu, Kyungjun Kim, Changhoon Heo, Jinhee Lee, Wonyeob Kim, Sung-Woong Chung, Bonggeun Shong
Publikováno v:
Silicon. 15:3193-3199
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::404f06354c83d29dd42740a33de4d9c7
https://doi.org/10.1007/s12633-022-02248-8
https://doi.org/10.1007/s12633-022-02248-8
Autor:
Tran Thi Ngoc Van, Donghak Jang, Eunae Jung, Hyunsik Noh, Jiwon Moon, Deok-Sin Kil, Sung-Woong Chung, Bonggeun Shong
Publikováno v:
The Journal of Physical Chemistry C. 126:18090-18099
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e25951b6e1450909f83d3efbb82ca98
https://doi.org/10.1021/acs.jpcc.2c04425
https://doi.org/10.1021/acs.jpcc.2c04425
Publikováno v:
Materials Letters. 328:133187
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6290d3e89b1aa457510c8a67183eb80
https://doi.org/10.1016/j.matlet.2022.133187
https://doi.org/10.1016/j.matlet.2022.133187
Autor:
Ki-Seon Park, Tsuneo Inaba, Hiromi Noro, Jonghoon Oh, Sung-Woong Chung, Akihito Yamamoto, Hyeongon Kim, Hisato Oyamatsu, Kazumasa Sunouchi, Jinwon Park, Yutaka Shirai, Seoung-Ju Chung, Dong-Keun Kim, Kenji Tsuchida, Ji-Hyae Bae, Hyunin Moon, Kwang-Myoung Rho
Publikováno v:
ISSCC
Spin-transfer torque magnetic RAM (STT-MRAM) is one of the most promising nonvolatile memories with guaranteed high-speed read and write operations. Along with performance improvements in the tunnel magnetoresistance (TMR) and the magnetic tunnel jun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f5e7dd5fe478f795d6d980cb7a53276
https://doi.org/10.1109/isscc.2017.7870428
https://doi.org/10.1109/isscc.2017.7870428
Autor:
Kazumasa Sunouchi, Kyoung-Hwan Park, Guk-Cheon Kim, Kwang-Myoung Rho, Haruichi Kanaya, Suock Chung, Akihito Yamamoto, K. Noma, J. Y. Yi, Kenji Tsuchida, Tatsuya Kishi, Toshihiko Nagase, Mun-Haeng Lee, Yun-Seok Chun, S. J. Hong, Sung-Woong Chung, Hisato Oyamatsu, Hyeongon Kim, Jeongsoo Park, Masahisa Yoshikawa
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
For the first time, 4Gbit density STT-MRAM using perpendicular MTJ in compact cell was successfully demonstrated through the tight distributions for resistance and magnetic properties. This paper includes the results regarding parasitic resistance co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e28a3cfd830ac5b0b140063b0a64ec20
https://doi.org/10.1109/iedm.2016.7838490
https://doi.org/10.1109/iedm.2016.7838490
Publikováno v:
Thin Solid Films. 529:347-351
Among the next generation nonvolatile memories, a resistive random access memory is promising due to its simple structure and ultra-fast speed. Pr1 − xCaxMnO3 is an attractive resistive random access memory material because it offers resistive swit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16408500c97779bb61bf4e479742fdea
https://doi.org/10.1016/j.tsf.2012.07.075
https://doi.org/10.1016/j.tsf.2012.07.075
Publikováno v:
Thin Solid Films. 529:352-355
La 1 − x Sr x MnO 3 (LSMO, x = 0.1, 0.3, and 0.5) thin films were prepared on Pt/Ti/SiO 2 /Si substrates using a radio frequency magnetron sputtering technique at a substrate temperature of 450 °C. The effects of Sr contents on the physical, chemi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d258ce75df334258c9dc55d8750a7539
https://doi.org/10.1016/j.tsf.2012.07.069
https://doi.org/10.1016/j.tsf.2012.07.069
Autor:
Jae Sung Roh, Ju-Wan Lee, Jong-Ho Lee, Jung-Kyu Lee, Sung-Woong Chung, Jinwon Park, Jong-Ho Bae, Sung-Joo Hong
Publikováno v:
Journal of Nanoscience and Nanotechnology. 12:5392-5396
As dimensions of resistive random access memories (RRAMs) devices continue to shrink, the low-frequency noise of nanoscale devices has become increasingly important in evaluating the device reliability. Thus, we investigated random telegraph noise (R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4021b82d9e4faa12facf87a15e149946
https://doi.org/10.1166/jnn.2012.6249
https://doi.org/10.1166/jnn.2012.6249
Publikováno v:
Ferroelectrics. 423:45-53
High-k insulator films of HfO2, Y2O3, and CeO2, were prepared on Nd2Ti2O7 (NT) ferroelectric to form metal-ferroelectric-insulator-semiconductor structures. The NT is a candidate ferroelectric material for use in a metal-ferroelectric-insulator-semic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8db3741b87e264528e63bc5abbf4c6f2
https://doi.org/10.1080/00150193.2011.618375
https://doi.org/10.1080/00150193.2011.618375
Publikováno v:
Journal of the Ceramic Society of Japan. 118:1017-1020
Ferroelectric materials are of interest due to their applications, such as in ferroelectric field effect transistor memory (FeFET). For this application, reducing retention time according to the leakage current is an important matter. Ferroelectric m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb80067ffd98eb12c25ca2fc4950e41b
https://doi.org/10.2109/jcersj2.118.1017
https://doi.org/10.2109/jcersj2.118.1017