Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Sung-Wei Huang"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 960-969 (2022)
The impact of oxide charges on the metal-insulator-semiconductor (MIS) device’s capacitance $({C})$ and conductance $({G})$ was studied in this work. A model to calculate MIS device’s ${C}$ and ${G}$ under the considerations of oxide charges, dop
Externí odkaz:
https://doaj.org/article/a9e9557c3c4b4e2caba711884291f0ae
Autor:
Sung-Wei Huang, Jenn-Gwo Hwu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1041-1048 (2021)
The metal-insulator-semiconductor tunnel diodes with ultra thin metal surrounded gate (UTMSG) have been found to have improved transient current behavior, and the improvement is proportional to the area of the surrounding gate. The resistance induced
Externí odkaz:
https://doaj.org/article/13b826291ebd4937a985392abdf49443
Autor:
Sung-Wei Huang, 黃松煒
101
Although injection molding is the most cost-effective way for the production of plastic components for industrial needs, it is subjected to restriction in process characteristics. So as the other innovation process including gas-assisted inj
Although injection molding is the most cost-effective way for the production of plastic components for industrial needs, it is subjected to restriction in process characteristics. So as the other innovation process including gas-assisted inj
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/34105768062890166322
Autor:
Sung-Wei Huang, 黃崧瑋
95
In this thesis, the reduced bimetallic oxide nanocrystal (BONs) embedded in the hafnium oxynitride (HfON) high-k film have been developed by means of the low-temperature chemical-vapor-deposition (CVD) method. The bimetallic acetate solutions
In this thesis, the reduced bimetallic oxide nanocrystal (BONs) embedded in the hafnium oxynitride (HfON) high-k film have been developed by means of the low-temperature chemical-vapor-deposition (CVD) method. The bimetallic acetate solutions
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/3ecuzh
Autor:
Sung-Wei Huang, Jenn-Gwo Hwu
Publikováno v:
ECS Transactions. 111:93-98
Transient behavior of metal-insulator-semiconductor tunnel diode (MISTD) with ultra-thin metal surrounded gate (UTMSG) is discussed in this work. The influence of an important parameter, S, which is the area proportion of surrounding gate to the tota
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2acb518af101b4430ce4371c2c014d4
https://doi.org/10.1149/11101.0093ecst
https://doi.org/10.1149/11101.0093ecst
Autor:
Sung-Wei Huang, JENN-GWO HWU
Publikováno v:
IEEE Transactions on Electron Devices. 69:7107-7112
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd83aed652e98aef0df46dba7572b895
https://doi.org/10.1109/ted.2022.3215103
https://doi.org/10.1109/ted.2022.3215103
Autor:
Sung-Wei Huang, Jenn-Gwo Hwu
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::836e40b40362d137c9909799e6cba1da
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134352
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134352
Autor:
Sung-Wei Huang, Jenn-Gwo Hwu
Publikováno v:
IEEE Transactions on Electron Devices. 68:6580-6585
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22568d35f546dbfc138baf653e099e49
https://doi.org/10.1109/ted.2021.3122814
https://doi.org/10.1109/ted.2021.3122814
Publikováno v:
International Communications in Heat and Mass Transfer. 39:216-223
A rapid heating in an injection molding cycle has the advantage of improving product quality without significant increase in cycle time. In this study, high-frequency proximity effect induced heating (HFPEIH) was developed and combined with water coo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86c2be63c7c068535f45b52c4b2b8388
https://doi.org/10.1016/j.icheatmasstransfer.2011.11.006
https://doi.org/10.1016/j.icheatmasstransfer.2011.11.006
Publikováno v:
Seikei-Kakou. 24:477-481
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3691a7b2525d82294c2ebfa2a66fcc20
https://doi.org/10.4325/seikeikakou.24.477
https://doi.org/10.4325/seikeikakou.24.477