Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Sung-Nee George Chu"'
Autor:
Sung Nee George Chu, E.J. Dean, David Alan Ackerman, L.J.P. Ketelsen, J.E. Johnson, Liming Zhang
Publikováno v:
IEEE Journal of Quantum Electronics. 37:1382-1387
We describe a protocol for assessing aging in the tuning section of a multisection distributed Bragg reflector laser integrated with amplifier, tap coupler, and electro-absorption modulator. Under accelerated aging, we observe a transient change of n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40e800eff12eec0d0447e967c5d8ab2c
https://doi.org/10.1109/3.958350
https://doi.org/10.1109/3.958350
Publikováno v:
Journal of Applied Physics. 80:3221-3227
Substitutional zinc incorporates linearly into device quality InP at low Zn source flow rate grown by atmospheric pressure metalorganic vapor phase epitaxy (AP‐MOVPE) at 625 °C, and saturates around 4×1018 cm−3 at high Zn source flow rate. Incr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aabe1f66ee045cd5400aa91e7a4029bd
https://doi.org/10.1063/1.363263
https://doi.org/10.1063/1.363263
Publikováno v:
Journal of Applied Physics. 79:1371-1377
Zinc incorporation into InP grown by atmospheric pressure metalorganic vapor phase epitaxy has been studied systematically as a function of Zn source flow rate, substrate orientation, and growth temperature. Within the growth conditions for device qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29ab39248a5039cfb8bef43820bb177c
https://doi.org/10.1063/1.361035
https://doi.org/10.1063/1.361035
Publikováno v:
Journal of Applied Physics. 78:3001-3007
Concentration dependent diffusion of Zn during metalorganic vapor phase epitaxy from a Zn‐doped InP layer into the adjacent undoped InP buffer layer were studied systematically using secondary ion mass spectroscopy and carrier concentration profili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::700cf13ec7ed6d552749dfac73a0413f
https://doi.org/10.1063/1.360049
https://doi.org/10.1063/1.360049
Publikováno v:
Journal of Applied Physics. 72:4118-4124
We report on a systematic study of atomic ordering in InGaAsP and InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition. InGaAsP lattice matched to InP, grown in a temperature range of 625–650 °C, reveals atomic ordering on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bbefb0d8ac7094cf57e9fb01fa80c63
https://doi.org/10.1063/1.352218
https://doi.org/10.1063/1.352218
Autor:
Young-Kai Chen, A. T. Macrander, J. P. van der Ziel, Arthur Mike Sergent, Fan Ren, Sung-Nee George Chu, D. V. Lang, Naresh Chand, Robert Hull
Publikováno v:
Journal of Applied Physics. 67:2343-2353
Improved growth conditions by molecular‐beam epitaxy (MBE) and fabrication of state‐of‐the‐art AlGaAs/GaAs selectively doped heterostructure transistors (SDHTs) and ring oscillators on Si substrates are reported. In MBE growth, use of minimum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eb1731e670cd7b06c62310633f46c2c
https://doi.org/10.1063/1.345529
https://doi.org/10.1063/1.345529
Autor:
A.M. Sergent, R. A. Logan, Sung-Nee George Chu, Tawee Tanbun-Ek, Young-Kai Chen, C. A. Burrus, P. Magi, Fow-Sen Choa, K.C. Reichmann, Won-Tien Tsang, Ming C. Wu
Publikováno v:
13th IEEE International Semiconductor Laser Conference.
We report a gain-coupled DFB laser grown by chemical beam epitaxy with a quantum well loss grating structure. Device performances with some preliminary system experiment results are included.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4677714649ad9937e1d8fb7afddff021
https://doi.org/10.1109/islc.1992.763549
https://doi.org/10.1109/islc.1992.763549
Autor:
Jérôme Faist, A. L. Hutchinson, Sung-Nee George Chu, A.Y. Cho, Carlo Sirtori, Federico Capasso, Deborah L. Sivco
Publikováno v:
52nd Annual Device Research Conference.
A new semiconductor injection laser (Quantum Cascade Laser) which differs in a fundamental way fiom diode lasers has been demonstrated. It relies on only one type of carrier (it is a unipolar semiconductor laser), and on electronic transitions betwee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b0840e279548fa1a1dbbd66ad25ca97
https://doi.org/10.1109/drc.1994.1009440
https://doi.org/10.1109/drc.1994.1009440
Autor:
Clyde G. Bethea, W. Fang, P. Wisk, Roosevelt People, Arthur Mike Sergent, Sung-Nee George Chu, G. Nykolak, R. Pawelek, T. Tanbun-Ek, Young-Kai Chen, P.J. Sciortino, W.T. Tsang
Publikováno v:
CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7da6f0f66b2b5325d48fb0876f465caf
https://doi.org/10.1109/cleo.1997.602190
https://doi.org/10.1109/cleo.1997.602190
Autor:
Niloy K. Dutta, P.N. Freeman, John Lopata, William S. Hobson, J. D. Wynn, Haewook Han, Sung-Nee George Chu
Publikováno v:
IEEE Photonics Technology Letters. 8:1133-1135
Small signal direct modulation characteristics of InGaAs-GaAsP-InGaP multiple quantum well ridge waveguide lasers (4.5/spl times/220 /spl mu/m/sup 2/) are described. The compressive strain of four InGaAs quantum wells is compensated by the tensile st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84c227bbf395602d938cc4c64c6ee807
https://doi.org/10.1109/68.531813
https://doi.org/10.1109/68.531813