Výsledky vyhledávání - "Sung-Min Yoon"

Akademický článek

Impacts of HfO2/ZnO Stack-Structured Charge-Trap Layers Controlled by Atomic Layer Deposition on Nonvolatile Memory Characteristics of In-Ga-Zn-O Channel Charge-Trap Memory Thin-Film Transistors

Autor: So-Yeong Na, Sung-Min Yoon

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 7, Pp 453-461 (2019)

We fabricated the charge-trap memory thin film transistors (CTM-TFTs) using InGaZnO (IGZO) active channel and HfO2/ZnO stack-structured charge-trap layer (CTL). To investigate the effects of the number and thickness of HfO2 layers inserted between th

Externí odkaz: https://doaj.org/article/c33cf01aa1df44cfbddfab730a00fd34

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Akademický článek

Sliding Mode Control with Sliding Perturbation Observer-Based Strategy for Reducing Scratch Formation in Hot Rolling Process

Autor: Hyun-Hee Kim, Sung-Jin Kim, Sung-Min Yoon, Yong-Joon Choi, Min-Cheol Lee

Publikováno v: Applied Sciences, Vol 11, Iss 12, p 5526 (2021)

In a hot rolling process, excessive friction between rollers and steel plates may lead to the formation of scratches on the steel plate. To reduce scratch formation in the finishing mill of the hot rolling process, two techniques are proposed in this

Externí odkaz: https://doaj.org/article/939444b00f4445f0b9de25c3976c5254

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Akademický článek

Ferroelectric Switching in Trilayer Al2O3/HfZrOx/Al2O3 Structure

Autor: Solyee Im, Seung-Youl Kang, Yeriaron Kim, Jeong Hun Kim, Jong-Pil Im, Sung-Min Yoon, Seung Eon Moon, Jiyong Woo

Publikováno v: Micromachines, Vol 11, Iss 10, p 910 (2020)

Since ferroelectricity has been observed in simple binary oxide material systems, it has attracted great interest in semiconductor research fields such as advanced logic transistors, non-volatile memories, and neuromorphic devices. The location in wh

Externí odkaz: https://doaj.org/article/1f095b79cad947a4b333de91717183a0

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Akademický článek

The association between gut microbiome and hypertension varies according to enterotypes: a Korean study

Autor: Ju Sun Song, Joung Ouk Ryan Kim, Sung Min Yoon, Min-Jung Kwon, Chang-Seok Ki

Publikováno v: Frontiers in Microbiomes, Vol 2 (2023)

IntroductionSeveral animal and clinical studies have reported that the state of the human gut microbiome is associated with hypertension. In this study, we investigated the association between the gut microbiome and hypertension in a Korean populatio

Externí odkaz: https://doaj.org/article/e559c8f7510f4a23bad9ecc5e2ec1cdf

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Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Autor: Soo-Hyun Bae, Jong-Heon Yang, Yong-Hae Kim, Young Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Chi-Sun Hwang, Sung-Min Yoon

Publikováno v: ACS Applied Materials & Interfaces. 14:31010-31023

Roles of oxygen interstitial defects located in the In-Ga-Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the cationic compositions and gate-stack process conditions. It was found from the spectroscopic e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ea49ebca5d5d6499aa63a34abeb8d65
https://doi.org/10.1021/acsami.2c07258

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Interrelation between ferroelectric properties and defects based on low-frequency noise analysis of HZO ferroelectric capacitor

Autor: Seunghee Jin, Juye Jeon, Min Jung Kim, Kiseok Heo, Jeong Hun Kim, Jong-Pil Im, Sung-Min Yoon, Seung Eon Moon, Jiyong Woo, Jae Woo Lee

Publikováno v: Applied Physics Letters. 122

Switching characteristics of ferroelectrics depend on the fabrication conditions and phase-transition results of each fabrication recipe. Here, the pulsed I–V and positive-up negative-down plots of hafnium zirconium oxide ferroelectric capacitors (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6f9e30568a1650ab2d41dbb366d66276
https://doi.org/10.1063/5.0140714

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