Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Sung-Hyuck Kim"'
Publikováno v:
Journal of Ambient Intelligence and Humanized Computing. 11:1923-1932
Personal identification method using the Electrocardiogram (ECG) signal is an active research area since the ECG signal cannot be forged and can be acquired without active awareness by the subject. In this paper, we propose a personal recognition sys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c11f37b69eb6ae99dfd190ff874b52f5
https://doi.org/10.1007/s12652-019-01401-3
https://doi.org/10.1007/s12652-019-01401-3
Autor:
Stuart J. Connolly, Supachai Tanomsup, Masatsugu Hori, M. Watanabe, Jun Zhu, Denis Xavier, Masaomi Koyanagi, Paul A. Reilly, J-H Chen, C-P Lau, Antonio L. Dans, Lars Wallentin, Prem Pais, Sung-Hyuck Kim, Lisheng Liu, Razali Omar, Michael D. Ezekowitz, Salim Yusuf, Ru San Tan
Publikováno v:
Cerebrovascular Diseases. 34:1-138
Efficacy and Safety of Dabigatran Versus Warfarin in Patients with Atrial Fibrillation : Analysis in Asian Population in RE-LY Trial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f13455efbfacb734f88909633077fe74
https://doi.org/10.1159/000341759
https://doi.org/10.1159/000341759
Autor:
Soon-ho Kim, Sang-Gyun Woo, Han-Ku Cho, Yong-Hoon Kim, Jeung-woo Lee, Sung-Hyuck Kim, Hye-Keun Oh
Publikováno v:
Japanese Journal of Applied Physics. 46:6124-6127
ArF immersion lithography may be the best candidate for sub-60 nm device patterning. However, the polarization effect is the most prominent root cause for the degradation of the image quality in high numerical aperture (NA) immersion lithography as t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8667b11263ea69cd6dedbf9b4c987716
https://doi.org/10.1143/jjap.46.6124
https://doi.org/10.1143/jjap.46.6124
Autor:
Dong-Hoon Chung, In-Kyun Shin, Sung-Woon Choi, Jung-Min Sohn, Sung-Hyuck Kim, H. H. Kim, Tae Moon Jeong, Woo-Sung Han
Publikováno v:
Japanese Journal of Applied Physics. 41:4060-4064
In this paper, we have investigated the line width variation depending on the amount of flare in DUV (248 nm) exposure tools and the optical parameters affecting line width variation due to flare. The field to be exposed was divided into two regions.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f675c10fcb70433c91b796a6952f603
https://doi.org/10.1143/jjap.41.4060
https://doi.org/10.1143/jjap.41.4060
Publikováno v:
Japanese Journal of Applied Physics. 45:5388-5390
Haze formation on a reticle continues to be a major problem for the semiconductor industry. Haze can be formed on the outside pellicle and on the quartz backside of the reticle. The major component of haze is known to be ammonium sulfate that comes f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::045c9f1c7df6c6e49b3027e7c4e5aef8
https://doi.org/10.1143/jjap.45.5388
https://doi.org/10.1143/jjap.45.5388
Autor:
Sun Young Choi, Jong Gul Doh, Yong Seung Moon, Seong Yoon Kim, Byung-Gook Kim, Bo-hye Kim, Sang-Gyun Woo, Han-Ku Cho, Sung Hyuck Kim, Sung Won Kwon, Cheol Hong Park
Publikováno v:
SPIE Proceedings.
As design rule has decreased, blank type or photo resist, which meets requirement of resolution, has been developed. HT PSM mainly used to pattern small line width has no longer advantages for immersion wafer process. It makes binary mask to be gradu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87a7fe09fc19724218a40154beeeed14
https://doi.org/10.1117/12.728977
https://doi.org/10.1117/12.728977
Publikováno v:
SPIE Proceedings.
Strong resolution enhancement techniques (RETs) are highly demanded to overcome the resolution limit of sub-60nm lithography. ArF immersion lithography may be the best candidate for sub-60nm device patterning. However, the polarization effect becomes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77d523ff258a4d526006753fc2272b2f
https://doi.org/10.1117/12.711318
https://doi.org/10.1117/12.711318
Autor:
Seung-Wook Park, Ilsin An, Young-Min Kang, Hye-Keun Oh, Sung-Jin Kim, Hye-Young Kang, Jin-Baek Park, Sung-Hyuck Kim
Publikováno v:
SPIE Proceedings.
Each generation of semiconductor device technology drives many new and interesting resolution enhancement technologies (RET). As minimum feature size of semiconductor devices have shrunk, the exposure wavelength has also progressively shrunk. The 193
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e69fbfd248a0052f81e8d292c0a83c7a
https://doi.org/10.1117/12.685941
https://doi.org/10.1117/12.685941
Autor:
Sung-Hyuck Kim, Ji-Eun Lee, Heejun Jeong, Eun-A Kwak, Seung-Wook Park, Eun Jin Kim, Dong-Soo Shin, Hye-Keun Oh, Hye-Young Kang
Publikováno v:
SPIE Proceedings.
Resolution enhancement technology (RET) refer to techniques that extend the usable resolution of an imaging system without decreasing the wavelength of light or increasing the numerical aperture (NA) of the imaging tool. Off-axis illumination (OAI) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f2af8fcb293bdf9d64352a528b1a4dc
https://doi.org/10.1117/12.656145
https://doi.org/10.1117/12.656145
Publikováno v:
SPIE Proceedings.
The mask error enhancement factor (MEEF) minimization is much emphasized due to the reduction of the device technology node. The MEEF is defined as how mask critical dimension (CD) errors are translated into wafer CD errors. We found that the pattern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41ea893a773b00c694cbcfc91394f1e0
https://doi.org/10.1117/12.632408
https://doi.org/10.1117/12.632408