Zobrazeno 1 - 10
of 157
pro vyhledávání: '"Sung-Ho Hahm"'
Publikováno v:
Nanomaterials, Vol 14, Iss 1, p 59 (2023)
Ultraviolet (UV) photodetectors are key devices required in the industrial, military, space, environmental, and biological fields. The Schottky barrier (SB)-MOSFET, with its high hole and electron barrier, and given its extremely low dark current, ha
Externí odkaz:
https://doaj.org/article/b003ba65a0074a5c9c03272644382a82
Autor:
Hyeon-Seok Jeong, Wan-Soo Park, Hyeon-Bhin Jo, In-Geun Lee, Tae-Woo Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Sung-Ho Hahm, Jae-Hak Lee, Dae-Hyun Kim
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 387-396 (2022)
This paper presents a physics-based analytical channel charge model for indium-rich InxGa1-xAs/In0.52Al0.48As quantum-well (QW) field-effect transistors (FETs) that is applicable from the subthreshold to strong inversion regimes. The model requires o
Externí odkaz:
https://doaj.org/article/dc6ba75799cc45bea3393de3a8a5a735
Publikováno v:
Sensors, Vol 21, Iss 12, p 4243 (2021)
Asymmetric metal-semiconductor-metal (MSM) aluminum gallium nitride (AlGaN) UV sensors with 24% Al were fabricated using a selective annealing technique that dramatically reduced the dark current density and improved the ohmic behavior and performanc
Externí odkaz:
https://doaj.org/article/e4c14f2f80e24e14b91e01dff305db4d
Publikováno v:
Sensors, Vol 19, Iss 5, p 1051 (2019)
The fabrication of a single pixel sensor, which is a fundamental element device for the fabrication of an array-type pixel sensor, requires an integration technique of a photodetector and transistor on a wafer. In conventional GaN-based ultraviolet (
Externí odkaz:
https://doaj.org/article/86dc8333887541e1b45f63f8eb8bf963
Autor:
Jong-Ki An, Nak-Kwan Chung, Jin-Tae Kim, Sung-Ho Hahm, Geunsu Lee, Sung Bo Lee, Taehoon Lee, In-Sung Park, Ju-Young Yun
Publikováno v:
Materials, Vol 11, Iss 3, p 386 (2018)
The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2) dielectric thin films that were fabricated using a CpZr[N(CH3)2]3/C7H8 cocktail precursor with ozone was investigated. The chemical, structural, and electrical
Externí odkaz:
https://doaj.org/article/41251df5c5a64a1eb8240736f5bd3905
Publikováno v:
Sensors, Vol 17, Iss 7, p 1684 (2017)
The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated
Externí odkaz:
https://doaj.org/article/f5de8c904073486ebf6ce445fbe30330
Publikováno v:
International Journal of Molecular Sciences, Vol 23, Iss 19, p 11807 (2022)
The evaluation of the protein glycosylation states of samples of aflibercept obtained from three different regions was conducted by site-specific N-linked glycan microheterogeneity profiling. Glycopeptide-based nano-LC MSMS mapping of tryptic-digeste
Externí odkaz:
https://doaj.org/article/4c320b9b784e4d5394bbc11b60616143
Publikováno v:
JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY. 31:271-277
Autor:
Hyeon-Seok Jeong, Wan-Soo Park, Hyeon-Bhin Jo, In-Geun Lee, Tae-Woo Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Sung-Ho Hahm, Jae-Hak Lee, Dae-Hyun Kim
Publikováno v:
IEEE Journal of the Electron Devices Society. 10:387-396
Publikováno v:
JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY. 30:261-266