Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sung-Hae Jang"'
Publikováno v:
Microelectronic Engineering. 198:98-102
With continued advances in semiconductor devices below 10 nm, the required specification for ultraclean wafer surfaces (i.e., achieving metal contamination 95% in all conditions because it reacted with both the chelating agents and HF.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::589820e11987fb79411e25424b2d7bfc
https://doi.org/10.1016/j.mee.2018.06.012
https://doi.org/10.1016/j.mee.2018.06.012
Autor:
Jin-Goo Park, Hyun-Tae Kim, Hee-Jin Song, Dong-Hwan Lee, Sung-Hae Jang, Jae-Hwan Yi, Eun-Suck Choi
Publikováno v:
ECS Transactions. 80:249-256
With continued advances in logic devices below 10 nm design rule, the required specification for ultraclean wafer surface becomes very challenging to achieve zero defects in particles below 20 nm and lower than 0.5X1010 atoms/cm2 metal ions on the fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51e4e76d5f7c667364184418907ab559
https://doi.org/10.1149/08002.0249ecst
https://doi.org/10.1149/08002.0249ecst
Autor:
Min-Su Kim, Hye-Keun Oh, Jin-Goo Park, In-Chan Choi, Jun Lee, In-Seon Kim, Jinho Ahn, Hye-Rim Ji, Kim Junghwan, Sung-Hae Jang, Hyun-Tae Kim
Publikováno v:
ECS Transactions. 69:101-108
Extreme ultraviolet lithography (EUVL) is the most promising lithography technique for the 22 nm half-pitch and beyond. The EUV patterned masks work in a reflective mode and it has 40 to 50 pairs of MoSi multilayer to reflect EUV radiation. This mult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84ebf398e8e73bc02923ecce6518e046
https://doi.org/10.1149/06908.0101ecst
https://doi.org/10.1149/06908.0101ecst
Publikováno v:
Korean Journal of Materials Research. 25:462~467-462~467
This work was supported by the Future Semiconductor Device Technology Development Program #10045366 funded By MOTIE(Ministry of Trade, Industry & Energy) and KSRC(Korea Semiconductor Research Consortium).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::396f4b30fa6ceac989306db8166f2859
https://doi.org/10.3740/mrsk.2015.25.9.462
https://doi.org/10.3740/mrsk.2015.25.9.462