Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sung-Gon Jin"'
Publikováno v:
Journal of The Electrochemical Society. 144:664-669
A rapid thermal processing (RTP) method to improve the barrier properties of collimated titanium nitride (TiN) was studied. The RTP for the collimated TiN shows a significantly improved diffusion barrier property with reduced electrical contact resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e70cfb165cce719ad0b1dd827d560fe8
https://doi.org/10.1149/1.1837464
https://doi.org/10.1149/1.1837464
Publikováno v:
2011 IEEE International Interconnect Technology Conference.
Low resistive tungsten (W) interconnects using chemical vapor deposited W (CVD-W) films deposited on B 2 H 6 -reduced W nucleation layers have been successfully developed for the buried gate electrode of sub-30nm dynamic random access memory (DRAM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fda07642dba4b3e9a92f1fae27e5890f
https://doi.org/10.1109/iitc.2011.5940358
https://doi.org/10.1109/iitc.2011.5940358
Autor:
Kyoung-Ryul Yoon, Jong-Ho Yun, Sung-Gon Jin, In-Cheol Ryu, Sang-Hwa Lee, Sung-Ki Park, Ku-Young Kim
Publikováno v:
Japanese Journal of Applied Physics. 40:5105
The submicron via-hole filling using a two-step Al sputtering process which consists of an Al low-pressure seed (ALPS) process and physical vapor deposition (PVD) Al, is described in this paper. The effect of the type of intermetal dielectric (IMD) m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70d16f61b5f805b8554b334ff21b0fb3
https://doi.org/10.1143/jjap.40.5105
https://doi.org/10.1143/jjap.40.5105
Publikováno v:
Interconnect Technology Conference & 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International; 2011, p1-3, 3p