Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Sung-Bok Kang"'
Autor:
Jong-ick Park, Sung-bok Kang
Publikováno v:
The Korean Folklore. 69:105-141
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2de319392bcb0db8e8e13058aa20baa
https://doi.org/10.21318/tkf.2019.5.69.105
https://doi.org/10.21318/tkf.2019.5.69.105
Autor:
Yong-Woo Kang, Youngsik Park, Sung Bok Kang, N. N. Vedenkin, Alexander Malyshev, Hyeunseok Choi, Yang-Sook Kim, Seoung-Chul Bang, Won-Kee Park, Dae-Hee Lee, Bongkon Moon
Publikováno v:
Optical Sensors 2019.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84f0975900a921a1e83e1429a959ef78
https://doi.org/10.1117/12.2524640
https://doi.org/10.1117/12.2524640
Autor:
Hyeunseok Choi, Sung-Bok Kang, Youngsik Park, Alexander Malyshev, Seoung-Chul Bang, Dae-Hee Lee, Won-Kee Park, Bongkon Moon, Yong-Woo Kang, N. N. Vedenkin, Yang-Soo Kim, So-Jeong Na
Publikováno v:
Advanced Science and Technology Letters.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f826ecf3d5464831d4c2975f9fe9e2be
https://doi.org/10.14257/astl.2018.150.12
https://doi.org/10.14257/astl.2018.150.12
Publikováno v:
Scopus-Elsevier
Defective regions of LED epi-wafers and chip-wafers could be observed by a photoluminescence (PL) imaging method. As the defective regions contain high density nonradiative recombination centers, the LED chips with defective regions showed different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d55f07e8945c53ca7d24654c8e54c6be
https://doi.org/10.1109/cleopr.2017.8118955
https://doi.org/10.1109/cleopr.2017.8118955
Autor:
Dae-Hee Lee, Youngsik Park, Bongkon Moon, Yong-Woo Kang, Won-Kee Park, Seoung-Chul Bang, HyeunSeok Choi, Sung-Bok Kang, Vedenkin, Nikolay, Malyshev, Alexander, Yang-Soo Kim
Publikováno v:
Proceedings of SPIE; 4/1/2019, Vol. 11028, p1-9, 9p
Autor:
Seungtaek Kim, Jongseok Kim, Min-Soo Noh, Sung Bok Kang, Dongsik Suh, Young-Jin Kim, Jae Min Kim, Jeong Hoon Yi, Sangdon Lee, Hoon Jeong, Yoonho Choi, Kyeongkyun Lee, Seok Gu Jung
Publikováno v:
physica status solidi c. 7:1801-1803
Thermal properties of 405 nm GaN-based laser diodes were investigated by employing a transient heating response method based on the temperature dependence of diode forward voltage. Thermal resistances of materials consisting of packaged laser diodes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98368dbb59dcae41062bb5f388c36d0f
https://doi.org/10.1002/pssc.200983498
https://doi.org/10.1002/pssc.200983498