Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Sung Yung Lee"'
Autor:
Ju-Young Jung, Jai-Hyun Kim, Jung-Hoon Park, Hwi San Kim, Hongsik Jeong, Sung Yung Lee, Heung Jin Joo, Do Yeon Choi, Kinam Kim, Seung Kuk Kang, E.S. Lee, Young-Min Kang
Publikováno v:
Integrated Ferroelectrics. 89:106-115
We developed a 1.6 V FRAM embedded device by successfully implementing a 100 nm MOCVD-PZT capacitor with a SrRuO3 electrode and a novel additional top electrode (ATE). ATE was used for preventing hydrogen-reduction damage or metal substance damage, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9022610195aa023551ddddc9f755014f
https://doi.org/10.1080/10584580601077625
https://doi.org/10.1080/10584580601077625
Autor:
Hartmut H. Aumann, L. Larrabee Strow, Mitch Goldberg, Joel Susskind, John Blaisdell, William L. Smith, Eric Fetzer, Henry E. Revercomb, Bjorn Lambrigtsen, W. W. McMillan, Philip W. Rosenkranz, Sung-Yung Lee, Scott E. Hannon, Murty Divakarla, Walter Wolf, Stephanie Granger, Moustafa T. Chahine, Luke Chen, Edward T. Olsen, Robert Atlas, Thomas S. Pagano, Lihang Zhou, Christopher D. Barnet, John Le Marshall, Fredrick W. Irion, David C. Tobin, Ramesh K. Kakar, Catherine Gautier, David H. Staelin, Eugenia Kalnay, Larry M. McMillin
Publikováno v:
Bulletin of the American Meteorological Society. 87:911-926
This paper discusses the performance of AIRS and examines how it is meeting its operational and research objectives based on the experience of more than 2 yr with AIRS data. We describe the science background and the performance of AIRS in terms of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d52068398a9621045dc24b2cdfddc3b3
https://doi.org/10.1175/bams-87-7-911
https://doi.org/10.1175/bams-87-7-911
Autor:
Kinam Kim, Sung-Yung Lee
Publikováno v:
Japanese Journal of Applied Physics. 45:3189-3193
For ferroelectric random access memory (FRAM) to be beneficial in future mobile devices, high-density FRAM with nm scaled cell should be developed. We have succeeded in scaling further the cell size of one-pass transistor and one-storage capacitor (1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9112bd3a58181caf43156e1d4fd7a90
https://doi.org/10.1143/jjap.45.3189
https://doi.org/10.1143/jjap.45.3189
Autor:
Nak-Won Jang, Yoon-Jong Song, Kyu-Mann Lee, Kinam Kim, Jung-Hoon Park, Sang-Woo Lee, Hyunho Kim, Suk-Ho Joo, Sung-Yung Lee, H. J. Joo
Publikováno v:
Japanese Journal of Applied Physics. 42:2033-2036
Since current 32 Mb high-density ferroelectric random access memory (FRAM) shows very narrow sensing window, it is strongly desired to improve the sensing widow for generating a reliable high yield. In this paper, we propose a TiAlN oxygen stopping l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c82d78e1301ad1bad6a85809c843bdf
https://doi.org/10.1143/jjap.42.2033
https://doi.org/10.1143/jjap.42.2033
Autor:
Bjorn Lambrigtsen, Sung-Yung Lee
Publikováno v:
IEEE Transactions on Geoscience and Remote Sensing. 41:343-351
Previous multispectral sounders have consisted of infrared and microwave instruments operated asynchronously, with the data interpolated during ground processing to common fields of view (FOVs) for geophysical retrieval processing. To help achieve th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7737350f8fe2ad5cb10486befc04fd9a
https://doi.org/10.1109/tgrs.2002.808246
https://doi.org/10.1109/tgrs.2002.808246
Autor:
Kinam Kim, Yoon-Jong Song, Hyun-Ho Kim, N. W. Jang, Mun-Kyu Choi, Byung-Gil Jeon, Dong-Jin Jung, Byung-Jun Min, Sung-Yung Lee, H. J. Joo
Publikováno v:
IEEE Journal of Solid-State Circuits. 37:1472-1478
Nonvolatile 32-Mb ferroelectric random access memory (FRAM) with-a 0.25-/spl mu/m design rule was developed by using an address transition detector (ATD) control scheme for the application to SRAM and applying a common plate folded bit-line cell sche
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93021d334c6435affbeb4491c84669ef
https://doi.org/10.1109/jssc.2002.802357
https://doi.org/10.1109/jssc.2002.802357
Autor:
Sung-Yung Lee, Kinam Kim
Publikováno v:
Ferroelectrics. 267:245-254
Current and future FRAM technologies are reviewed and discussed for developing high density FRAM devices as stand-alone memory application. In order to enter into mainstream of memory devices, FRAM devices should achieve such small cell size factor o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::760ef1ae436eef3cda2f7f6a02b9ad34
https://doi.org/10.1080/00150190211025
https://doi.org/10.1080/00150190211025
Publikováno v:
SPIE Proceedings.
The Atmospheric Infrared Sounder (AIRS) on the EOS Aqua Spacecraft was launched in May of 2002. The AIRS Sounding Suit, AIRS along with AMSU-A and HSB, were designed to measure the atmospheric temperature and water vapor profiles, the surface and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d621e8cac7e18507adb3b3dfdb9868
https://doi.org/10.1117/12.868474
https://doi.org/10.1117/12.868474
Autor:
Suk Ho Joo, D. J. Jung, Hyunho Kim, Yong-Tak Lee, B.J. Koo, Sung Yung Lee, Kinam Kim, Yoon J. Song
Publikováno v:
IEEE Electron Device Letters. 21:280-282
A novel capacitor process was successfully implemented in 4 Mb FRAM device by developing a barrier layer rounded by Si/sub 3/N/sub 4/ spacer (BRS) scheme. Using this process, it is possible to eliminate an undesired barrier etching damage, which is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dbc73eec68139a2609ced2fcb167d08
https://doi.org/10.1109/55.843150
https://doi.org/10.1109/55.843150
Autor:
Youngsoo Park, Sung Yung Lee, June Key Lee, Kinam Kim, Yoon J. Song, D. J. Jung, Byung Hee Kim, B.J. Koo
Publikováno v:
Applied Physics Letters. 74:2286-2288
Two different interlayer dielectric (ILD) materials, electron cyclotron resonance chemical vapor deposition oxide (ECR-OXIDE) and plasma enhanced chemical vapor deposition TEOS oxide (PE-TEOS), were prepared at 400 and 200 °C respectively, on silico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7934e9ae395dfcf286364e282a8483e5
https://doi.org/10.1063/1.123826
https://doi.org/10.1063/1.123826