Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Sung Woon Moon"'
Publikováno v:
New Physics: Sae Mulli. 65:1-13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b8d8da8d51d3488b6c8a08716162154
https://doi.org/10.3938/npsm.65.1
https://doi.org/10.3938/npsm.65.1
Publikováno v:
Analytical Chemistry. 86:11093-11099
Cell culture and polymerase chain reaction are currently regarded as the gold standard for adenoviral conjunctivitis diagnosis. They maximize sensitivity and specificity but require several days to 3 weeks to get the results. The aim of this study is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3649cea2d5b5596f6645dcb7013100da
https://doi.org/10.1021/ac5025478
https://doi.org/10.1021/ac5025478
Autor:
Sung Woon Moon1, Moo Sang Kim2, Eung Suk Kim1, Seung-Young Yu1 syyu@khu.ac.kr, Hyung-Woo Kwak1
Publikováno v:
Ophthalmologica. Mar2011, Vol. 225 Issue 3, p169-175. 7p. 2 Color Photographs, 2 Charts, 2 Graphs.
Small-signal modeling approach to 0.1-μm metamorphic HEMTs for W-band coplanar MMIC amplifier design
Publikováno v:
Current Applied Physics. 12:81-88
We present an accurate and reliable modeling method for designing the W-band (75–110 GHz) small-signal millimeter-wave monolithic integrated circuit (MMIC) amplifiers with the GaAs-based 0.1-μm metamorphic high electron-mobility transistors (MHEMT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01f5ca223b7cadb89d11d0faa4803ab1
https://doi.org/10.1016/j.cap.2011.04.046
https://doi.org/10.1016/j.cap.2011.04.046
Publikováno v:
Microwave and Optical Technology Letters. 53:1694-1697
We demonstrate a 94-GHz coplanar waveguide (CPW) to rectangular waveguide transition on high permittivity sapphire substrate. Monolithically fabricated uniplanar transition is composed of the fin-line taper and the open-type CPW to slotline transitio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5950ed19de64f9f4e79aea95aaf1bba
https://doi.org/10.1002/mop.26121
https://doi.org/10.1002/mop.26121
Autor:
John Twynam, Hong Goo Choi, Sung-Dal Jung, Sungwon D. Roh, Jong Sub Lee, Jeong Soon Yim, Deok-Won Seo, Heejae Shim, Sung-Woon Moon
Publikováno v:
Solid-State Electronics. 96:19-21
We present a reliable process and design technique for realizing high voltage AlGaN/GaN hetero-junction field effect transistors (HFETs) on Si substrates with very low and stable off-state leakage current characteristics. In this work, we have invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2e5dbc098c25e613ea0559b692e7fd5
https://doi.org/10.1016/j.sse.2014.03.011
https://doi.org/10.1016/j.sse.2014.03.011
Autor:
Hong Goo Choi, Sungwon D. Roh, Ki Min Kim, Jeong Soon Yim, Jong-Sub Lee, John Twynam, Sung-Dal Jung, Deok-Won Seo, Sung-Woon Moon
Publikováno v:
IEEE Electron Device Letters. 35:446-448
We present the development of an Au-free ohmic contact metallization for high voltage GaN-based high electron mobility transistors (HEMTs). In this letter, low contact resistance (0.81 Ω·mm) is obtained for Au-free electrodes on AlGaN/GaN HEMT stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9259065e22ab1c37b1a6ab3e1aa236ba
https://doi.org/10.1109/led.2014.2304587
https://doi.org/10.1109/led.2014.2304587
Publikováno v:
Current Applied Physics. 10:395-400
This paper presents a 94 GHz monolithic down-converter with low conversion loss and high local oscillator (LO)-to-RF isolation using the 0.1 μm T-gate metamorphic high electron-mobility transistor (MHEMT) technology. The down-converter consists of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0658328000d33c7cc1e2770ad99ee432
https://doi.org/10.1016/j.cap.2009.06.036
https://doi.org/10.1016/j.cap.2009.06.036
Autor:
Jin-Koo Rhee, Jae-Seo Lee, Byoung-Chul Jun, Sung-Woon Moon, Min Han, Jung-Hun Oh, Sang-Jin Lee, Sam-Dong Kim
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 57:1487-1493
We investigate the effects of a multigate-feeding structure on the gate resistance (Rg) and RF characteristics of the high electron-mobility transistors (HEMTs). In this structure, the increase of Rg with the gatewidth (W) is minimized; therefore, hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37a61d6bfac683e6fae26ceb54cfb662
https://doi.org/10.1109/tmtt.2009.2020671
https://doi.org/10.1109/tmtt.2009.2020671
Autor:
Sam-Dong Kim, Yong-Hyun Baek, Jung-Hun Oh, Min Han, Jin-Koo Rhee, Seok-Gyu Choi, Sung-Woon Moon
Publikováno v:
Japanese Journal of Applied Physics. 46:6503-6508
We investigate the effects of the number of gate fingers (N) and gate width (W) on the high-frequency characteristics of 0.1 µm depletion-mode metamorphic high-electron-mobility transistors (MHEMTs). The extracted gate-to-source capacitance (Cgs), g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bef430c80d316098d4ebf5f722d06ec7
https://doi.org/10.1143/jjap.46.6503
https://doi.org/10.1143/jjap.46.6503