Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Sung Woo Yoon"'
Publikováno v:
The Journal of Supercomputing. 77:471-497
Malware uses a variety of anti-reverse engineering techniques, which makes its analysis difficult. Dynamic analysis tools, e.g., debuggers, DBI (Dynamic Binary Instrumentation), and CPU emulators, do not provide both accuracy and convenience when ana
Publikováno v:
Development & Reproduction
In vertebrate reproductive system, estrogen receptor (ER) plays a pivotal role in mediation of estrogenic signaling pathways. In the present study, we report the cDNA cloning, expression analysis, and transcriptional activity of ERβ1 subtype from me
Autor:
Seouk-Kyu Choi, Young-Kwan Kim, Seung-Jun Bae, Seung-Hyun Cho, Jae-Woo Jung, Dae Hyun Kim, Byung-Cheol Kim, Sung-Woo Yoon, Jae-Koo Park, Yong-Hun Kim, Si-Hyeong Cho, Jung-Bae Lee, Jinyong Choi, Dae-Hyun Kwon, Seong-hoon Kim, Chan-Young Kim, Byongwook Na, Yong-Jun Kim, Jae-Woo Lee, Dong-Yeon Park, Hye-In Choi, Reum Oh, Hyung-Jin Kim, Min-Su Ahn, Dongkeon Lee, Jihwa You, Nam Sung Kim, Jaemin Choi, Jun-Ho Kim, Jeong-Don Ihm, Hyung-Seok Cha, Kyoung-Ho Kim, Young-Jae Park, Min-Soo Jang
Publikováno v:
ISSCC
The demand for mobile DRAM has increased, with a requirement for high density, high data rates, and low-power consumption to support applications such as 5G communication, multiple cameras, and automotive. Thus, density has increased from 2Gb [1] to
Autor:
Eun-Ju Kang, Jin-Hee Lee, Mun-Hoe Lee, Hyeong-Min Kim, Hee-Chul Chung, Sung-Woo Yoon, Jae-Min Hwang
Publikováno v:
Food Supplements and Biomaterials for Health. 1
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 18:373-382
Autor:
Daesik Moon, Jung-Hwan Choi, Seok-Hun Hyun, Jung-Bae Lee, Sung-Woo Yoon, Su-Jin Park, Dong-Hoon Lee, Jin-Hyeok Baek, Seung-Jun Bae, Y.S. Park, Hui-Kap Yang, Ki-Han Kim, Hyuck-Joon Kwon, Young-Soo Sohn, Chang-Kyo Lee, Bok-Gue Park, Young-Jae Kim, Jin-Seok Heo, Kyungryun Kim, Soobong Jang, Ki-Ho Kim, Joung-Wook Moon, Kwang-Il Park, Jae-Hyung Lee
Publikováno v:
VLSI Circuits
A 5Gb/s/pin 16Gb LPDDR4/4X reconfigurable SDRAM with a self-mode detection scheme, a voltage-high keeper (VHK) for un-terminated load and a prediction-based fast-tracking ZQ algorithm is implemented in 10nm class ($2^{nd}$ generation) DRAM process. P
Publikováno v:
Journal of the Korean Physical Society. 53:3348-3351
Autor:
Kee-Won Kwon, Sung-Woo Yoon
Publikováno v:
2015 International SoC Design Conference (ISOCC).
This paper proposes a highly linear source follower (S.F) circuit aiming for the front-end buffer of data convertors. The linearity is systematically improved by maintaining an invariant voltage drop between gate and source nodes of an MOSFET placing
Publikováno v:
Korean Circulation Journal
A 68-year old man presented with a 1-month history of shortness of breath. He was a heavy smoker. His blood pressure was normal but his pulse rate was 40 beats per minute. A chest X-ray showed normal cardiac size without abnormal pulmonary lesions. T