Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Sung Woo Ma"'
Publikováno v:
Microelectronics Reliability. 78:220-226
The effect of oxygen plasma treatment on the adhesion between nonconductive film (NCF) and oxidized Si was investigated. Oxidized Si wafers were treated with oxygen plasma for 5 min and then rinsed in de-ionized water (DIW). The water contact angle w
Autor:
Min Suk Suh, Ki Bum Kim, Young Ho Kim, Nam-Seog Kim, Chanho Shin, Jeong Hwan Lee, Sung Woo Ma
Publikováno v:
Scripta Materialia. 104:21-24
Enhanced direct Cu/Cu joining by applying current was investigated. Joining was conducted at 240–300 °C for 10–50 min under 40 MPa. Current was applied to Cu wire during joining. Contact resistance of joints decreased and the fracture load of jo
Publikováno v:
Journal of Electronic Packaging. 139
The effect of applied current in enhancing bonding was studied in Cu-to-Cu direct bonding using Cu microbumps. A daisy-chain structure of electroplated Cu microbumps (20 μm × 20 μm) was fabricated on Si wafer. Cu-to-Cu bonding was performed in amb
Publikováno v:
Journal of Electronic Materials. 43:3296-3306
Chip to chip bonding techniques using Cu bumps capped with thin solder layers have been frequently applied to 3D chip stacking technology. We studied the effect of joint microstructure on shear strength. Joints were formed by joining Sn/Cu bumps on a
Publikováno v:
Advanced Materials Research. 900:711-714
Chip to Chip bonding technology using Cu bumps with solder capping layer has been widely investigated for 3D chip stacking applications. We studied the reliability of the Cu joints. Cu bumps capped with Sn-Ag solder layer were joined to bare Cu pads
Autor:
Jin Su Lee, Jae Myun Kim, Jae Sung Oh, Nam-Seog Kim, Sung Woo Ma, Jeong Hwan Lee, Ki Bum Kim, Young Ho Kim, Young-Min Kim
Publikováno v:
Journal of Materials Science: Materials in Electronics. 24:3255-3261
The effects of solder deformation on the wetting characteristics during fluxless soldering were studied when deformed Sn–3.5Ag solder balls were reacted with Cu or oxidized Cu substrates. The Cu surfaces were oxidized at 100 °C for 2 or 4 h in air
Publikováno v:
Journal of Electronic Packaging; Dec2017, Vol. 139 Issue 4, p1-1, 1p