Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Sung Mook Chung"'
Publikováno v:
Journal of Nanoscience and Nanotechnology. 12:3421-3424
Transparent zinc tin oxide thin-film transistors (ZTO-TFTs) [Zn:Sn = 4:1-2:1] have been fabricated so as to estimate the electrical instability under constant current stress. The relative intensity of the drain current noise power spectra density has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5955fce4a803d5b7f55c8b823c642ab4
https://doi.org/10.1166/jnn.2012.5624
https://doi.org/10.1166/jnn.2012.5624
Publikováno v:
Ceramics International. 38:S617-S621
We have investigated the effects of Ti doping on the structural, optical, and electrical properties of indium tin oxide (ITO) thin films prepared by direct-current (DC) sputtering at room temperature. It is observed that the Ti doping changes the mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6522f393b51a8faf3a2e37fa1298e7bf
https://doi.org/10.1016/j.ceramint.2011.05.110
https://doi.org/10.1016/j.ceramint.2011.05.110
Autor:
Sung Mook Chung, Seung Jae Lee, Seung-Youl Kang, Young Jin Kim, Kyoung Ik Cho, Woo-Seok Cheong, Chi-Sun Hwang, Jaeheon Shin
Publikováno v:
Journal of Crystal Growth. 326:94-97
The effects of zinc on the zinc-doped CaTiO 3 :Pr 3+ phosphors have been investigated by varying the zinc concentrations from 0 to 100 mol%. The variation of zinc concentration influences the crystallinity and morphology of the phosphors. The crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c9fcff11168765186dcd12dd034339e
https://doi.org/10.1016/j.jcrysgro.2011.01.060
https://doi.org/10.1016/j.jcrysgro.2011.01.060
Publikováno v:
Journal of Crystal Growth. 326:186-190
Using ZnO, and three compositional In 2 O 3 -Ga 2 O 3 -ZnO (IGZO, In:Ga:Zn=1:1:1, 2:1:2, 2:2:1, atomic ratio) semiconductors, we have made and evaluated several double layered oxide thin-film transistors (TFTs). The drain current was mainly affected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::263e4cdf1c576346114f0619dd7e0e6c
https://doi.org/10.1016/j.jcrysgro.2011.01.094
https://doi.org/10.1016/j.jcrysgro.2011.01.094
Autor:
Sang-Hee Ko Park, Kyoung Ik Cho, Chi-Sun Hwang, Jae-Heon Shin, Jeong-Min Lee, Woo-Seok Cheong, Min Ki Ryu, Sung Mook Chung
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:782-786
This paper reports on the structural and optical properties of ZnCuO thin films that were prepared by co-sputtering for the application of p-type-channel transparent thin-film transistors (TFTs). Pure ceramic ZnO and metal Cu targets were prepared fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1e8a998461c348c81236a652f3d05d6
https://doi.org/10.1166/jnn.2011.3157
https://doi.org/10.1166/jnn.2011.3157
Autor:
Shinhyuk Yang, Jeong-Min Lee, Jong-Ho Lee, Sung Min Yoon, Chi-Sun Hwang, Kyoung Ik Cho, Woo-Seok Cheong, Sang-Hee Ko Park, Chun-Won Byun, Sung Mook Chung
Publikováno v:
ETRI Journal. 31:660-666
We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Znoxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below 200°C, using a target composition of In:Ga:Zn = 2:1:2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46a7db5875b3145398965cd27f2cc938
https://doi.org/10.4218/etrij.09.1209.0049
https://doi.org/10.4218/etrij.09.1209.0049
Autor:
Woo Seok Cheong, Sung Min Yoon, Shinhyuk Yang, Chi-Sun Hwang, Chun-Won Byun, Sang-Hee Ko Park, Min-Ki Ryu, Kyoung Ik Cho, Sung Mook Chung, Doo Hee Cho
Publikováno v:
Journal of Information Display. 10:137-142
Transparent top‐gate Al‐Zn‐Sn‐O (AZTO) thin‐film transistors (TFTs) with an Al2O3 protective layer (PL) on an active layer were studied, and a transparent 2.5‐inch QCIF+AMOLED (active‐matrix organic light‐emitting diode) display panel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51b4cba688dca3686aa4af0c86db295e
https://doi.org/10.1080/15980316.2009.9652097
https://doi.org/10.1080/15980316.2009.9652097
Publikováno v:
Journal of the Korean Physical Society. 55:1123-1127
We report on the growth and the properties of Sb-doped ZnMgO thin films deposited using radiofrequency (rf) magnetron sputtering for applications as transparent thin film transistors (TFTs) with p-type channels. The target was prepared with high-puri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7c74c530e7c7051584f84add9ac9c99
https://doi.org/10.3938/jkps.55.1123
https://doi.org/10.3938/jkps.55.1123
Publikováno v:
Journal of Nanoscience and Nanotechnology. 8:5602-5605
A novel hybrid device structure for efficient white organic light emitting diodes has been developed, which has a high hole injection barrier between a fluorescence blue emission layer and a electron transporting layer, and therefore excitons could b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3704cf14c4c67d3fed0047dca09993f9
https://doi.org/10.1166/jnn.2008.1429
https://doi.org/10.1166/jnn.2008.1429
Publikováno v:
Molecular Crystals and Liquid Crystals. 491:1-8
A blue light emitting diode based on wide band gap host for a blue fluorescence light emitting layer has been developed to fabricate hybrid white organic light emitting diode comprising of a fluorescence blue and a phosphorescence red light emitting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7f7db2773b9f3fc6ff8a790f90e8b5b
https://doi.org/10.1080/15421400802328527
https://doi.org/10.1080/15421400802328527