Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Sung Kwan Lim"'
Autor:
Byungjin Cho, Jongwon Yoon, Sung Kwan Lim, Ah Ra Kim, Sun-Young Choi, Dong-Ho Kim, Kyu Hwan Lee, Byoung Hun Lee, Heung Cho Ko, Myung Gwan Hahm
Publikováno v:
Sensors, Vol 15, Iss 10, Pp 24903-24913 (2015)
We have investigated the effects of metal decoration on the gas-sensing properties of a device with two-dimensional (2D) molybdenum disulfide (MoS2) flake channels and graphene electrodes. The 2D hybrid-structure device sensitively detected NO2 gas m
Externí odkaz:
https://doaj.org/article/7bc162fcac7246b0b0c233776741562f
Publikováno v:
Nanomaterials, Vol 8, Iss 10, p 797 (2018)
The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS2/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 107, with a lower subthreshold
Externí odkaz:
https://doaj.org/article/2ab9c2da667c4ab7be27027fb17c5a74
Publikováno v:
The e-Business Studies. 23:75-94
Autor:
Yang-Kyu Choi, Kyu-Man Hwang, Do Hyun Kim, Sung Kwan Lim, Seong-Yeon Kim, Choong-Ki Kim, Seung-Wook Lee, Geon-Beom Lee, Hagyoul Bae, Myungsoo Seo, Byoung Hun Lee
Publikováno v:
IEEE Transactions on Electron Devices. 65:1640-1644
Deuterium (D2) annealing was applied to a poly-crystalline silicon thin-film transistor (poly-Si TFT) to improve reliability and performance. The field-effect electron mobility ( $\mu $ ) was extracted using the gate transconductance ( ${g}_{m}$ ) me
Autor:
Soo Cheol Kang, Byoung Hun Lee, Kyu Hwan Lee, Sun Young Choi, Byung Jin Cho, Dongho Kim, Jucheol Park, Kang Eun Lee, Jungheum Yun, Myung Gwan Hahm, Guoqing Zhao, Sung Kwan Lim, Ah Ra Kim, Yonghun Kim
Publikováno v:
ACS Applied Materials & Interfaces. 9:37146-37153
Molybdenum disulfide with atomic-scale flatness has application potential in high-speed and low-power logic devices owing to its scalability and intrinsic high mobility. However, to realize viable technologies based on two-dimensional materials, tech
Autor:
Byoung Hun Lee, Sung Kwan Lim, Young Gon Lee, Chang Goo Kang, Doo Hua Choi, Hyun-Jong Chung, Yun Ji Kim, Rino Choi
Publikováno v:
Microelectronic Engineering. 163:55-59
A model to explain the origin of channel width dependent field effect mobility is proposed. According to our model accounting the effect of non-uniform carrier transport in a graphene channel, the field effect mobility of wide channel graphene FET ha
Publikováno v:
Nanomaterials
Nanomaterials, Vol 8, Iss 10, p 797 (2018)
Volume 8
Issue 10
Nanomaterials, Vol 8, Iss 10, p 797 (2018)
Volume 8
Issue 10
The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS2/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 ×
107, with a lower subt
107, with a lower subt
Publikováno v:
IRPS
We propose a simple method to monitor the quality of MIM capacitor. The differences in the slope of C-F curve at low and high frequency are found to be a good indicator showing the difference in the reliability characteristics of MIM capacitor. Asymm
Autor:
Sung Kwan Lim, Jongwon Yoon, Heung Cho Ko, Ah Ra Kim, Dongho Kim, Myung Gwan Hahm, Jung Dae Kwon, Young-Joo Lee, Byung Jin Cho, Byoung Hun Lee, Kyu Hwan Lee, Sung-Gyu Park
Publikováno v:
ACS Applied Materials & Interfaces. 7:16775-16780
We report the production of a two-dimensional (2D) heterostructured gas sensor. The gas-sensing characteristics of exfoliated molybdenum disulfide (MoS2) connected to interdigitated metal electrodes were investigated. The MoS2 flake-based sensor dete
Autor:
Yonghun, Kim, Ah Ra, Kim, Guoqing, Zhao, Sun Young, Choi, Soo Cheol, Kang, Sung Kwan, Lim, Kang Eun, Lee, Jucheol, Park, Byoung Hun, Lee, Myung Gwan, Hahm, Dong-Ho, Kim, Jungheum, Yun, Kyu Hwan, Lee, Byungjin, Cho
Publikováno v:
ACS applied materialsinterfaces. 9(42)
Molybdenum disulfide with atomic-scale flatness has application potential in high-speed and low-power logic devices owing to its scalability and intrinsic high mobility. However, to realize viable technologies based on two-dimensional materials, tech