Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Sung Jae Chang"'
Publikováno v:
IEEE Access, Vol 12, Pp 41019-41026 (2024)
In this study, we developed a wearable eye tracker leveraging mini-infrared point sensors. The eye tracker utilized two inexpensive mini-infrared ray (IR) point sensors to measure the left-right eye movements of both eyes. These left-right eye moveme
Externí odkaz:
https://doaj.org/article/4f2bef62fe99414e9871340208715877
Autor:
Byoung-Gue Min, Jong-Min Lee, Hyung Sup Yoon, Woo-Jin Chang, Jong-Yul Park, Dong Min Kang, Sung-Jae Chang, Hyun-Wook Jung
Publikováno v:
ETRI Journal, Vol 45, Iss 1, Pp 171-179 (2023)
We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application. The core processes are a two-step
Externí odkaz:
https://doaj.org/article/28ea7ef4c57f42238c856b7816a0f91b
Autor:
Jong‐Min Lee, Woo‐Jin Chang, Dong Min Kang, Byoung‐Gue Min, Hyung Sup Yoon, Sung‐Jae Chang, Hyun‐Wook Jung, Wansik Kim, Jooyong Jung, Jongpil Kim, Mihui Seo, Sosu Kim
Publikováno v:
ETRI Journal, Vol 42, Iss 4, Pp 549-561 (2020)
We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The D
Externí odkaz:
https://doaj.org/article/71feb69d343a47ecbb3a7b73b69b0f93
Autor:
Sung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, Youngho Bae, Hyun-Wook Jung, Il-Gyu Choi, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Dong-Min Kang, Jong-Won Lim
Publikováno v:
Nanomaterials, Vol 13, Iss 5, p 898 (2023)
Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. When th
Externí odkaz:
https://doaj.org/article/3142430887454ec1bd26ee450c90f97a
Autor:
Byoung‐Gue Min, Jong‐Min Lee, Hyung Sup Yoon, Woo‐Jin Chang, Jong‐Yul Park, Dong Min Kang, Sung‐Jae Chang, Hyun‐Wook Jung
Publikováno v:
ETRI Journal. 45:171-179
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef4bfadca3cc14b6688637c4dcd0f36a
https://doi.org/10.4218/etrij.2021-0370
https://doi.org/10.4218/etrij.2021-0370
Autor:
Sung-Jae Chang, Kyu-Jun Cho, Sang-Youl Lee, Hwan-Hee Jeong, Jae-Hoon Lee, Hyun-Wook Jung, Sung-Bum Bae, Il-Gyu Choi, Hae-Cheon Kim, Ho-Kyun Ahn, Jong-Won Lim
Publikováno v:
Crystals, Vol 11, Iss 11, p 1414 (2021)
We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the subs
Externí odkaz:
https://doaj.org/article/499bcfa0b2c14cde967ac96b2b7f0f8e
Autor:
Soo Cheol Kang, Hyun-Wook Jung, Sung-Jae Chang, Seung Mo Kim, Sang Kyung Lee, Byoung Hun Lee, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2116 (2020)
An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF4 plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-g
Externí odkaz:
https://doaj.org/article/fe8bc6099d2b4c19bc414e2ed09b6d2e
Autor:
Sung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, Jung-Hee Lee, Youngho Bae, Hyun-Wook Jung, Soo Cheol Kang, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2175 (2020)
The device performance deterioration mechanism caused by the total ionizing dose effect after the γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and H
Externí odkaz:
https://doaj.org/article/18e43b84a212499da1141036540960f9
Autor:
Dong-Seok Kim, Jiye Kim, Jae Dong Lee, Hokyun Ahn, Hyun-Wook Jung, Si-Young Choi, Odongo Francis Ngome Okello, Jong Kyu Kim, Sung-Jae Chang, Youngjae Kim, Seokho Moon, Jaewon Kim, Jong-Won Lim
Publikováno v:
ACS Applied Materials & Interfaces. 13:59440-59449
While two-dimensional (2D) hexagonal boron nitride (h-BN) is emerging as an atomically thin and dangling bond-free insulating layer for next-generation electronics and optoelectronics, its practical implementation into miniaturized integrated circuit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a3a9d543ef1ca9c97fbe710cb206ca5
https://doi.org/10.1021/acsami.1c15970
https://doi.org/10.1021/acsami.1c15970
Autor:
Sung-Jae Chang, Seong-Il Kim, Soo Cheol Kang, Kyu Jun Cho, Jong-Won Lim, Hae Cheon Kim, Hyun-Wook Jung, Sang-Heung Lee, Hokyun Ahn, Youn Sub Noh
Publikováno v:
ECS Transactions. 98:519-526
GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are intensively investigated for high power, high frequency [1] and aerospace application [2] due to its wide bandgap, high breakdown field, and high carrier densi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8538bc1238c07702c4a659e03b4d2992
https://doi.org/10.1149/09805.0519ecst
https://doi.org/10.1149/09805.0519ecst