Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Sung Haeng Cho"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 830-834 (2018)
Asymmetrical electrical properties induced by local acceptor-like defect states in oxide semiconductor thin-film transistors are investigated. In addition, we report on the origin of asymmetrical transport characteristics depending on the drain volta
Externí odkaz:
https://doaj.org/article/1f6a74f3bef74ff6b96e24091eb19654
Publikováno v:
SID Symposium Digest of Technical Papers. 53:388-390
Publikováno v:
IEEE Electron Device Letters. 42:1327-1330
In this work, we present a new fabrication methodology to enable high-performance thin-film transistor (TFT) with submicron channel length. The method can exceed the resolution limit of a conventional photolithography compatible with large-area subst
Publikováno v:
ECS Meeting Abstracts. :1268-1268
We fabricated p-type thin-film transistors(TFTs) using SeTe films deposited by pulsed laser ablation at room temperature. The TFTs were thermally annealed at different temperatures (150°C, 200°C, 250°C) under oxygen ambient. It was found that the
Publikováno v:
ECS Meeting Abstracts. :1273-1273
We demonstrate the fabrication technology of metal oxide semiconductor thin-film transistors (TFTs) with deep submicron channel length and their electrical characterization. We call the method as self-aligned nano gap patterning (SANP), where the pat
Publikováno v:
npj Computational Materials, Vol 4, Iss 1, Pp 1-7 (2018)
The ultimate transparent electronic devices require complementary and symmetrical pairs of n-type and p-type transparent semiconductors. While several n-type transparent oxide semiconductors like InGaZnO and ZnO are available and being used in consum
Autor:
Hee-Ok Kim, Seunghyup Yoo, Kee-Chan Park, Jong-Heon Yang, Ji Hun Choi, Sung Haeng Cho, Chi-Sun Hwang, Jae-Eun Pi
Publikováno v:
IEEE Electron Device Letters. 39:508-511
We present high-mobility back channel etch Al–In–Zn–Sn–O/In–Zn–O (IZO) double-layer channel thin-film transistors (TFTs). The field-effect mobility of 53.2 $\text{cm}^{2}/\text{V} \cdot \text{s}$ , threshold voltage of 0.5 V, and subthres
Publikováno v:
RSC Advances. 8:5622-5628
We fabricated amorphous InGaZnO thin film transistors (a-IGZO TFTs) with aluminum oxide (Al2O3) as a gate insulator grown through atomic layer deposition (ALD) method at different deposition temperatures (Tdep). The Al2O3 gate insulator with a low Td
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 830-834 (2018)
Asymmetrical electrical properties induced by local acceptor-like defect states in oxide semiconductor thin-film transistors are investigated. In addition, we report on the origin of asymmetrical transport characteristics depending on the drain volta
Publikováno v:
physica status solidi (a). 218:2170052