Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Sunfei Fang"'
Autor:
E. Engbrecht, Edward P. Maciejewski, Christopher D. Sheraw, R. Divakaruni, Zhengwen Li, Allen H. Gabor, L. Economikos, Fernando Guarin, N. Zhan, H-K Lee, MaryJane Brodsky, Kenneth J. Stein, Siyuranga O. Koswatta, Y. Yang, Byeong Y. Kim, J. Hong, A. Bryant, Herbert L. Ho, Ruqiang Bao, Nicolas Breil, Babar A. Khan, E. Woodard, W-H. Lee, C-H. Lin, A. Levesque, Kevin McStay, V. Basker, Viraj Y. Sardesai, C. Tran, A. Ogino, Reinaldo A. Vega, C. DeWan, Shreesh Narasimha, J-J. An, Amit Kumar, A. Aiyar, Ravikumar Ramachandran, W. Wang, X. Wang, W. Nicoll, D. Hoyos, A. Friedman, Barry Linder, Yongan Xu, E. Alptekin, Cathryn Christiansen, S. Polvino, Han Wang, Scott R. Stiffler, G. Northrop, S. Saudari, J. Rice, Saraf Iqbal Rashid, Sunfei Fang, Michael V. Aquilino, Z. Ren, B. Kannan, Geng Wang, Noah Zamdmer, T. Kwon, Paul D. Agnello, Hasan M. Nayfeh, S. Jain, Robert R. Robison, M. Hasanuzzaman, J. Cai, L. Lanzerotti, D. Wehelle-Gamage, Basanth Jagannathan, J. Johnson, E. Kaste, Kai Zhao, Huiling Shang, Carl J. Radens, Shariq Siddiqui, Y. Ke, D. Ferrer, Ximeng Guan, D. Conklin, K. Boyd, K. Henson, Siddarth A. Krishnan, Bernard A. Engel, H. Dong, S. Mahajan, Unoh Kwon, Dominic J. Schepis, William Y. Chang, Liyang Song, Brian J. Greene, Chengwen Pei, S.-J. Jeng, Clevenger Leigh Anne H, Vijay Narayanan, C. Zhu, Wai-kin Li, Henry K. Utomo, Wei Liu, Dureseti Chidambarrao
Publikováno v:
2014 IEEE International Electron Devices Meeting.
We present a fully integrated 14nm CMOS technology featuring finFET architecture on an SOI substrate for a diverse set of SoC applications including HP server microprocessors and LP ASICs. This SOI finFET architecture is integrated with a 4th generat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6233530b0b3fd6ddc14276a018716523
https://doi.org/10.1109/iedm.2014.7046977
https://doi.org/10.1109/iedm.2014.7046977
Autor:
Rajeev Malik, Rishikesh Krishnan, Sunfei Fang, Bernhard Wunder, Kevin McStay, Yanli Zhang, Sadanand V. Deshpande, Douglas Daley, Herbert L. Ho, Sneha Gupta, Paul C. Parries, Balaji Jayaraman, Sungjae Lee, Puneet Goyal, John E. Barth, Scott R. Stiffler, Paul D. Agnello, Subramanian S. Iyer
Publikováno v:
ICICDT
In this paper, we present a systematic performance study and modeling of on-chip deep trench (DT) decoupling capacitors for high-performance SOI microprocessors. Based on system-level simulations, it is shown that the DT decoupling capacitors (decap)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83d6b2dd06f89254c9ba9a3578b0ab30
https://doi.org/10.1109/icicdt.2012.6232872
https://doi.org/10.1109/icicdt.2012.6232872
Autor:
Herbert L. Ho, Jinping Liu, Paul C. Parries, Norman Robson, Jing Li, Puneet Goyal, S.S. Iyer, Ming Yin, Babar A. Khan, Zhengwen Li, Paul D. Agnello, K. V. Hawkins, Sunfei Fang, T. Weaver, Scott R. Stiffler, Kevin McStay, Rishikesh Krishnan, W. Davies, R. Takalkar, T. Kirihata, Sami Rosenblatt, S. Galis, A. Blauberg, Shreesh Narasimha, Michael P. Chudzik, Amanda L. Tessier, William K. Henson, W. Kong, Edward P. Maciejewski, Alberto Cestero, Nauman Zafar Butt, Joseph Ervin, S. Gupta, Jeyaraj Antony Johnson, S. Rombawa, Sungjae Lee, J. Barth, Ying Zhang
Publikováno v:
2010 International Electron Devices Meeting.
We present industry's smallest eDRAM cell and the densest embedded memory integrated into the highest performance 32nm High-K Metal Gate (HKMG) SOI based logic technology. The cell is aggressively scaled at 58% (vs. 45nm) and features the key innovat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::324242387bfae4ae688888a5d8ad886a
https://doi.org/10.1109/iedm.2010.5703434
https://doi.org/10.1109/iedm.2010.5703434
Autor:
Russell H. Arndt, Ashima B. Chakravarti, Anthony G. Domenicucci, Amanda L. Tessier, Jinping Liu, Sunfei Fang, Kevin McStay, Zhengwen Li, Randolph F. Knarr, S. Lee, Joseph F. Shepard, Herbert L. Ho, A. Arya, R. Venigalla, W. Davies, R. Takalkar, Rishikesh Krishnan, Paul C. Parries, B. Morgenfeld, Xin Li, S. Gupta, Michael P. Chudzik, Scott R. Stiffler, Puneet Goyal, Babar A. Khan, Sadanand V. Deshpande, J. Dadson, Scott D. Allen
Publikováno v:
2010 IEEE International SOI Conference (SOI).
In this paper, we describe the unique scaling challenges, critical sources of variation, and the potential trench leakage mechanisms of 32nm trench capacitors that utilize high-к/metal electrode materials. This is the first eDRAM technology that has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::923f4cfd581d96da2ab4d0cb5f97f7c8
https://doi.org/10.1109/soi.2010.5641378
https://doi.org/10.1109/soi.2010.5641378
Autor:
S.S. Iyer, Ravi M. Todi, Rajeev Malik, Erik A. Nelson, Rishikesh Krishnan, Sunfei Fang, Byeong Y. Kim, R. Takalkar, D. Anand, Oh-Jung Kwon, Michael P. Chudzik, Nauman Zafar Butt, Scott R. Stiffler, Herbert L. Ho, Joseph Ervin, Siddarth A. Krishnan, Babar A. Khan, Alberto Cestero, Gregory G. Freeman, Geng Wang, Karen A. Nummy, J. Sim, Amanda L. Tessier, Jin Liu, W. Kong, Paul C. Parries, Kevin McStay
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
A high performance embedded DRAM with deep trench capacitor and high performance SOI logic has been deployed in 45nm and 32nm technology nodes. Following a yield ramp of the sub-2ns latency 45nm technology, we present, for the first time, a 32nm eDRA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d6cc411a517f48787c659ad0590ab81
https://doi.org/10.1109/iedm.2009.5424375
https://doi.org/10.1109/iedm.2009.5424375
Autor:
A. Mallikarjunan, Hosadurga Shobha, Xinlin Wang, Ghavam G. Shahidi, Chun-Yung Sung, Eric A. Joseph, Sunfei Fang, Isaac Lauer, Eva E. Simonyi, Sampath Purushothaman, Wilfried Haensch, Nicholas C. M. Fuller, C. Ouyang, Tien Cheng, Huiming Bu, Elbert E. Huang
Publikováno v:
2008 IEEE International SOI Conference.
Integration of low-dielectric constant SiCOH dielectrics (k~3) adjacent to gate stacks is demonstrated using 65 nm technology. Substantial reductions in parasitic capacitances are achieved through reductions in the outer fringe component of the overl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37a05a3b4bf31f11978c204607dd205e
https://doi.org/10.1109/soi.2008.4656274
https://doi.org/10.1109/soi.2008.4656274
Autor:
Ying Li, Sadanand V. Deshpande, J. Yuan, R. Divakaruni, Oleg Gluschenkov, Heon Lee, V. Sardesai, Victor Chan, Sunfei Fang, Y.T. Chow, T. Kebede, Carl J. Radens, N. Cave, C. Ryou, S.S. Naragad, Roger A. Booth, W. Wille, Manfred Eller, Helen Wang, JiYeon Ku, J.H. Yang, Nivo Rovedo, O.S. Kwon, H. Shang, V. Vidya, Narasimhulu Kanike, W. Clark, C.W. Lai, J. Yan, J. Liang, M.R. Visokay, J. Sudijono, H. Mo, Oh-Jung Kwon, Y. Gao
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
This paper presents a cost-effective low power 45 nm bulk technology platform, primarily designed to serve the wireless multimedia and consumer electronics need. This technology platform features carbon co-IIP in the nMOS halo, laser annealing scheme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fae93cd5f35a51f7c3b3ef39514f23eb
https://doi.org/10.1109/icsict.2008.4734744
https://doi.org/10.1109/icsict.2008.4734744
Autor:
Erdem Kaltalioglu, Zhijiong Luo, Victor Ku, Y. H. Lin, A. Ajmera, Seong-Dong Kim, T. Schiml, W. L. Tan, S. Marokkey, P. Wrschka, Dirk Vietzke, M. Weybright, F.F. Jamin, R. Mo, D.-G. Park, An L. Steegen, Wenhe Lin, Padraic Shafer, Terence B. Hook, V. Klee, JiYeon Ku, Rajesh Rengarajan, C. Wann, K. Kim, Jenny Lian, Andy Cowley, Victor Chan, Sunfei Fang, A. Vayshenker, K-C. Lee, Christopher V. Baiocco, I. Yang, L. Kim, Manfred Eller, Randy W. Mann, B. Zhang, C. Coppock, Mark Hoinkis, J. Sudijono, Huilong Zhu, Phung T. Nguyen
Publikováno v:
Scopus-Elsevier
This paper reports a cutting-edge 65nm CMOS technology featuring high performance and low power CMOS devices for both general and low power applications. Utilizing plasma nitrided gate oxide, off-set and slim spacers, advanced co-implants, NiSi and l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5455847fc85f7a2c23cdb1895e40c02
https://doi.org/10.1109/iedm.2004.1419254
https://doi.org/10.1109/iedm.2004.1419254
Autor:
Jinghong Li, Angela Lamberti, Anthony Domenicucci, Henry Utomo, Nivo Rovedo, Zhijiong Luo, Sunfei Fang, Hung Ng, Judson R. Holt, Anita Madan, Chung Woh Lai, Ja-Hum Ku, Dominic J. Schepis, Jin-Ping Han
Publikováno v:
ECS Meeting Abstracts. :2437-2437
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b0842c5b2a42994f4bea5f200f66e49
https://doi.org/10.1149/ma2008-02/37/2437
https://doi.org/10.1149/ma2008-02/37/2437
Autor:
E. Gusev, Cyril Cabral, Young-Hee Kim, Barry Linder, Eduard Cartier, Sufi Zafar, Paul Jamison, Hasan Nayfeh, Sunfei Fang
Publikováno v:
ECS Meeting Abstracts. :703-703
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78ec1a0b33167269ea149fab4370bc52
https://doi.org/10.1149/ma2005-01/15/703
https://doi.org/10.1149/ma2005-01/15/703