Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Sundar Babu Isukapati"'
Autor:
Tianshi Liu, Hua Zhang, Sundar Babu Isukapati, Emran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Ayman Fayed, Marvin H. White, Anant K. Agarwal
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 129-138 (2022)
Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600V lateral SiC power MOSFETs and low-voltage SiC CMOS devices. It enables application-specific SiC ICs with high power output and work under harsh (high
Externí odkaz:
https://doaj.org/article/da1ff765b0fc44b8a3a07ceecf6d277a
Autor:
Sundar Babu Isukapati, Woongje Sung
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 176-181 (2020)
This paper reports generalized design solutions for the punch-through and nonpunch-through drift layers in 4H-SiC. In general, the critical electric field relation of Konstantinov is widely used to design the drift parameters in 4H-SiC due to its acc
Externí odkaz:
https://doaj.org/article/5ffaa51466864bf6941b9f89f8612a37
Autor:
Dongyoung Kim, Skylar DeBoer, Stephen A Mancini, Sundar Babu Isukapati, Justin Lynch, Nick Yun, Adam J Morgan, Seung Yup Jang, Woongje Sung
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2101162fefecea5ca6eaedf4f25b3c4
https://doi.org/10.1109/irps48203.2023.10118091
https://doi.org/10.1109/irps48203.2023.10118091
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a332ef03514cc76464a422e236e1bd2
https://doi.org/10.1109/wipda56483.2022.9955284
https://doi.org/10.1109/wipda56483.2022.9955284
Autor:
Hua Zhang, Tianshi Liu, Utsav Gupta, Sundar Babu Isukapati, Emran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Anant K. Agarwal, Ayman Fayed
Publikováno v:
2022 IEEE 65th International Midwest Symposium on Circuits and Systems (MWSCAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf18c5af209d33e3d0f5f5cf333018c3
https://doi.org/10.1109/mwscas54063.2022.9859305
https://doi.org/10.1109/mwscas54063.2022.9859305
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89988e4697e1e37ebc7d2a9b8042e73e
https://doi.org/10.1109/ispsd49238.2022.9813635
https://doi.org/10.1109/ispsd49238.2022.9813635
Autor:
Sundar Babu Isukapati, Adam J Morgan, Woongje Sung, Hua Zhang, Tianshi Liu, Ayman Fayed, Anant K. Agarwal, Emran Ashik, Bongmook Lee
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0c861e94cce2692135940238c6aea5f
https://doi.org/10.1109/wipda49284.2021.9645134
https://doi.org/10.1109/wipda49284.2021.9645134
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::638c4e95df1d1d3ebf1f124cc1f68422
https://doi.org/10.1109/wipda49284.2021.9645097
https://doi.org/10.1109/wipda49284.2021.9645097
Autor:
Sundar Babu Isukapati, Emaran Ashik, Marvin H. White, Tianshi Liu, Woongje Sung, Adam J. Morgan, Bongmook Lee, Anant K. Agarwal, Ayman Fayed, Hua Zhang
Publikováno v:
MWSCAS
This paper presents the SPICE modeling and circuit development of a SiC power integrated circuit (IC) technology that offers monolithic integration of high-voltage lateral n-type SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65fa67f417d2e04203c4c28c3859c10d
https://doi.org/10.1109/mwscas47672.2021.9531903
https://doi.org/10.1109/mwscas47672.2021.9531903
Autor:
Tianshi Liu, Adam J. Morgan, Hua Zhang, Emran Ashik, Anant K. Agarwal, Ayman Fayed, Bongmook Lee, Sundar Babu Isukapati, Woongje Sung
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This paper reports the design and process flow for monolithic integration of lateral high voltage (HV) power MOSFET with low voltage (LV) CMOS circuits for SiC Power IC technology. The reported devices and circuits are fabricated on a N−/N+ 4H-SiC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::798b3431c773f64da3d53fa56c12d0bc
https://doi.org/10.23919/ispsd50666.2021.9452235
https://doi.org/10.23919/ispsd50666.2021.9452235