Zobrazeno 1 - 10
of 97
pro vyhledávání: '"Sunbin Deng"'
Autor:
Yifan Yuan, Michele Kotiuga, Tae Joon Park, Ranjan Kumar Patel, Yuanyuan Ni, Arnob Saha, Hua Zhou, Jerzy T. Sadowski, Abdullah Al-Mahboob, Haoming Yu, Kai Du, Minning Zhu, Sunbin Deng, Ravindra S. Bisht, Xiao Lyu, Chung-Tse Michael Wu, Peide D. Ye, Abhronil Sengupta, Sang-Wook Cheong, Xiaoshan Xu, Karin M. Rabe, Shriram Ramanathan
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate
Externí odkaz:
https://doaj.org/article/b8089fc1ff5f457598d16d42e6dde14a
Autor:
Jian Ma, Bowen Xing, Yan Cao, Xin He, Kate E Bennett, Chao Tong, Chiying An, Taylor Hojnacki, Zijie Feng, Sunbin Deng, Sunbin Ling, Gengchen Xie, Yuan Wu, Yue Ren, Ming Yu, Bryson W Katona, Hongzhe Li, Ali Naji, Xianxin Hua
Publikováno v:
EMBO Molecular Medicine, Vol 13, Iss 5, Pp 1-22 (2021)
Abstract Pancreatic beta cells undergo compensatory proliferation in the early phase of type 2 diabetes. While pathways such as FoxM1 are involved in regulating compensatory beta cell proliferation, given the lack of therapeutics effectively targetin
Externí odkaz:
https://doaj.org/article/d764a053a59a49c5a1e44e7b4becb24f
Autor:
Yuming Xu, Wei Zhong, Bin Li, Sunbin Deng, Houbo Fan, Zhaohui Wu, Lei Lu, Fion Sze Yan Yeung, Hoi Sing Kwok, Rongsheng Chen
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 144-150 (2021)
This article proposes a voltage-to-frequency converter (VFC) design using unipolar metal-oxide thin film transistor (TFT) technology. The proposed VFC has an integrator and Schmitt trigger based structure. This structure has the advantages of constan
Externí odkaz:
https://doaj.org/article/90971cca56514857b5d237fcbe7d5646
Autor:
Yuming Xu, Bin Li, Wei Zhong, Sunbin Deng, Houbo Fan, Zhaohui Wu, Fion Sze Yan Yeung, Hoi Sing Kwok, Rongsheng Chen
Publikováno v:
Electronics Letters, Vol 57, Iss 2, Pp 67-70 (2021)
Abstract This letter proposes a unipolar thin‐film transistor (TFT)‐based amplifier design that can provide enhanced DC offset suppression. The amplifier consists of an input AC coupling network and a capacitor bootstrap amplifier. By making the
Externí odkaz:
https://doaj.org/article/8a9a018f763c40e48d142bd03f21a9ad
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-14 (2020)
The chaperone HYPK regulates the human N-terminal acetyltransferase E (NatE) complex, but the mechanism is not fully understood. Here, the authors study the interplay of NatE and HYPK by cryo-EM and biochemical approaches, providing insights into the
Externí odkaz:
https://doaj.org/article/81657bc1bec14c11ac8cd119b0aa1960
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 435-441 (2020)
Conduction characteristics and low frequency noises in ITO-stabilized ZnO thin film transistors (TFTs) with constant channel width (W=50 μm) and different channel lengths (L=5, 10, 25, 50 and 100 μm) are measured and analysis. Firstly, dependences
Externí odkaz:
https://doaj.org/article/214d84bbc8aa4595a770935d6098a60d
Autor:
Shufeng Weng, Rongsheng Chen, Wei Zhong, Sunbin Deng, Guijun Li, Fion Sze Yan Yeung, Linfeng Lan, Zhijian Chen, Hoi-Sing Kwok
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 632-637 (2019)
In this paper, we present thin-film transistors (TFTs) with a zinc–tin–oxide (ZTO) layer achieved through magnetron co-sputtering. Amorphous ZTO TFTs with an Sn concentration of 2.49%, 6.95%, 7.11%, 11.95%, and 16.47% were fabricated, to investig
Externí odkaz:
https://doaj.org/article/400d9b0a92f84515ba85634b3e5980ef
Autor:
Xuemei Yin, Yayi Chen, Guoyuan Li, Wei Zhong, Sunbin Deng, Lei Lu, Guijun Li, Hoi Sing Kwok, Rongsheng Chen
Publikováno v:
AIP Advances, Vol 11, Iss 4, Pp 045326-045326-5 (2021)
We report on in situ fluorine-doped ZnSnO (ZTO:F) thin-film transistors (TFTs) fabricated by co-sputtering. The low frequency noise (LFN) characteristics of ZTO:F TFTs under different annealing temperatures and FSnO (FTO) deposition powers are compar
Externí odkaz:
https://doaj.org/article/0b31034289f3483fadb02ca13b093e0c
Publikováno v:
eLife, Vol 9 (2020)
NatB is one of three major N-terminal acetyltransferase (NAT) complexes (NatA-NatC), which co-translationally acetylate the N-termini of eukaryotic proteins. Its substrates account for about 21% of the human proteome, including well known proteins su
Externí odkaz:
https://doaj.org/article/9d35bf8ff2de44ac970822239928d144
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 240-244 (2018)
Silicon self-implantation technique is applied to passivate the defects in the grain boundaries of the polycrystalline silicon (poly-Si) thin film. The implantation of Si with low dose is a precise technique of introducing Si interstitials in the pol
Externí odkaz:
https://doaj.org/article/f08b9f9d4a3b426bb6352b3b9e619012