Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Sunao Aya"'
Autor:
Yasuki Yamamoto, Yoshiyuki Nakaki, Kohei Ebihara, Satoshi Yamakawa, Yoshihiko Toyoda, Shuhei Nakata, Sunao Aya, Masayuki Imaizumi
Publikováno v:
Materials Science Forum. :791-794
Edge termination guaranteeing high breakdown voltage and robustness in its fabrication are required in SiC power devices. We newly employed the VLD edge termination for 3.3 kV-rated SiC SBDs, which was formed by Al ion implantation using a resist mas
Autor:
Nahoko Hisata, Satoshi Gonda, Taeho Keem, Ken Enjoji, Hirohisa Fujimoto, Ichiko Misumi, Sunao Aya, Akihiro Fujii, Qiangxian Huang, Hiroaki Sumitani, Takeshi Yamagishi, Tomizo Kurosawa
Publikováno v:
Measurement Science and Technology. 16:2080-2090
We have developed a new atomic force microscope with differential laser interferometers (DLI-AFM), carried out test measurements of the prototype 1D-grating standards with pitches of 100, 80, 60 and 50 nm using the DLI-AFM and evaluated the uncertain
Autor:
Takashi Takenaga, Sadeh Beysen, Takeharu Kuroiwa, Hiroshi Kobayashi, Tetsuo Yoshida, Sunao Aya, Masahiko Yamamoto, Ryoichi Nakatani, Yoshio Kawamura, Yasushi Endo
Publikováno v:
Journal of Magnetism and Magnetic Materials. 286:31-36
Ni–Fe/Mn–Ir asymmetric ring dots with partially planed outer sides are investigated in order to confirm a method for obtaining pinned layers in magnetic memories with asymmetric ring shapes. Magnetic force microscopy revealed that the direction o
Autor:
Hiroshi Watanabe, Koji Kise, Kenji Marumoto, Kenji Itoga, Sunao Aya, Hideki Yabe, Hiroaki Sumitani
Publikováno v:
Japanese Journal of Applied Physics. 41:7550-7555
This paper describes one aspect of advanced proximity X-ray lithography, called second generation proximity X-ray lithography (PXL-II). The spectra absorbed in the resists containing special elements (e.g., Cl, S, P, Si and Br), which have an absorpt
Autor:
Sunao Aya, Hideki Yabe, Yasuji Matsui, Kenji Marumoto, Hiroshi Watanabe, Takashi Hifumi, Kenji Itoga, Muneyoshi Suita, H. Sumitani
Publikováno v:
Microelectronic Engineering. 53:587-590
Synchrotron radiation lithography is applied to the real dynamic random access memory process. Two full chip x-ray masks whose overlay accuracy is 19.2nm (x) and 26.4nm(y) are prepared. By using Canon x-ray stepper, total overlay accuracy less than 4
Autor:
Masahiko Yamamoto, Ryoichi Nakatani, Yasushi Endo, Takeharu Kuroiwa, Tetsuo Yoshida, Hiroshi Kobayashi, Yoshio Kawamura, Sadeh Beysen, Sunao Aya, Takashi Takenaga
Publikováno v:
Journal of Applied Physics. 95(11):6714-6716
Ni–Fe asymmetric ring dots with partially planed outer sides were investigated as candidates for high-density magnetic memory cells. The magnetic states, which were measured with magnetic force microscopy, show that in-plane magnetic fields can con
Publikováno v:
TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series B. 56:3854-3859
A binary gas permeation method is proposed to investigate the gas transportation characteristics of the components of solid oxide fuel cells. The properties of porous media, such as pore diameter, porosity and tortuosity factor, are obtained from the
Autor:
Isao Sasaki, Ryoichi Nakatani, Tetsuo Yoshida, Keiichi Otaki, Yasushi Endo, Yoshio Kawamura, Masahiko Yamamoto, Takashi Takenaga, Sunao Aya, Takeharu Kuroiwa, Sadeh Beysen, Hiroshi Kobayashi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff7df148453a33f1cfa32614765f6b13
https://doi.org/10.4028/0-87849-996-2.171
https://doi.org/10.4028/0-87849-996-2.171
Publikováno v:
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference.
In this work the authors have evaluated the energy intensity distributions on thinned x-ray masks by the combination of the dot exposure and line exposure methods in 100 kV electron beam writing.
Autor:
H. Sumitani, S. Uzawa, K. Itoga, Y. Nishioka, T. Kuroiwa, Yasunori Tokuda, Sunao Aya, S. Yamamoto, Takaaki Kawahara, Takeshi Fujino, Takashi Hifumi, H. Abe, Kenji Marumoto, Katsuomi Shiozawa, Toshiyuki Oishi, K. Kanamoto, T. Oomori, K. Nishikawa, M. Nunoshita, Hideki Yabe, Masafumi Kimata
Publikováno v:
Proceedings of International Electron Devices Meeting.
We have fabricated experimental memory cell arrays with a unit cell size of 0.29 /spl mu/m/sup 2/ (0.38 /spl mu/m/spl times/0.76 /spl mu/m). The layout was designed for a half-pitch 8F/sup 2/ cell with 0.14-/spl mu/m process technology, which is prom