Zobrazeno 1 - 10 of 49 pro vyhledávání: '"Sunan, Ding"'
1
Akademický článek
InGaN‐Based Whispering Gallery Mode Laser with Lateral Nanoporous Distributed Bragg Reflector Exhibits Superior Mode Selectivity
Autor: Lixia Zhao, Jiawei Chen, Shan Lin, Yuqing Huang, Xiaotian Ge, Ting Wang, Tiangui Hu, Sunan Ding, Kaiyou Wang
Publikováno v: Advanced Electronic Materials, Vol 10, Iss 7, Pp n/a-n/a (2024)
Abstract Whispering gallery mode (WGM) laser with single‐mode is important for optoelectronic applications because of the higher stability during the light signal transmission. But till now, for InGaN‐based WGM laser, most reports of lasing behav
Externí odkaz: https://doaj.org/article/cd19271d427340e4b72c87be4c779e86
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2
Akademický článek
Amorphous-like TiN Films as Barrier Layers for Copper
Autor: Shicheng Han, Shicheng Yang, Xiaohong Zeng, Ying Wu, Tong Liu, Hu Wang, Sunan Ding
Publikováno v: Crystals, Vol 14, Iss 11, p 951 (2024)
The titanium nitride (TiN) columnar structure results in a rapid diffusion of copper atoms into the substrate along a vertical path. In this paper, the TiN columnar growth process was modified, which resulted in the deposition of amorphous-like films
Externí odkaz: https://doaj.org/article/984c12555c844370a831a793d2d840b3
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3
Akademický článek
Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge
Autor: Liyan Dai, Jinyan Zhao, Jingrui Li, Bohan Chen, Shijie Zhai, Zhongying Xue, Zengfeng Di, Boyuan Feng, Yanxiao Sun, Yunyun Luo, Ming Ma, Jie Zhang, Sunan Ding, Libo Zhao, Zhuangde Jiang, Wenbo Luo, Yi Quan, Jutta Schwarzkopf, Thomas Schroeder, Zuo-Guang Ye, Ya-Hong Xie, Wei Ren, Gang Niu
Publikováno v: Nature Communications, Vol 13, Iss 1, Pp 1-10 (2022)
The integration of epitaxial complex oxides on semiconductor and flexible substrates is required but challenging. Here, the authors report the highly heterogeneous epitaxy of transferrable BaTiO3-δ membrane with enhanced flexoelectricity on Ge (011)
Externí odkaz: https://doaj.org/article/086e2df161d74cb189e091ed8908a837
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4
Akademický článek
Interdigital Structure Enhanced the Current Spreading and Light Output Power of GaN-Based Light Emitting Diodes
Autor: Jie Ding, Lingjuan Che, Xiao Chen, Tao Zhang, Yongdan Huang, Zengli Huang, Zhongming Zeng, Hulin Zhang, Sunan Ding, Hui Yang
Publikováno v: IEEE Access, Vol 8, Pp 105972-105979 (2020)
In this manuscript, blue light emitting diodes (LEDs) with comb-shaped mesa and interdigital electrodes structure based on gallium nitride (GaN) are presented. This kind of LEDs have showed higher light output power and more efficient current spreadi
Externí odkaz: https://doaj.org/article/9c668baed41e467aa064fa7295202402
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6
Akademický článek
Accurate surface band bending determination on Ga-polar n-type GaN films by fitting x-ray valence band photoemission spectrum
Autor: Zengli Huang, Ying Wu, Yanfei Zhao, Lin Shi, Rong Huang, Fangsen Li, Tong Liu, Leilei Xu, Hongwei Gao, Yu Zhou, Qian Sun, Sunan Ding, Ke Xu, Hui Yang
Publikováno v: AIP Advances, Vol 9, Iss 11, Pp 115106-115106-9 (2019)
The surface band bending in Ga-polar n-type GaN surfaces, as well as the effect of Si doping levels and in situ Ar+ ion processing on band bending, was systematically investigated. To precisely determine the valence band maximum (VBM) of GaN beyond i
Externí odkaz: https://doaj.org/article/fad2cfc759a1432285a6dcedd83154df
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7
Akademický článek
Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition
Autor: Yuxin An, Liyan Dai, Ying Wu, Biao Wu, Yanfei Zhao, Tong Liu, Hui Hao, Zhengcheng Li, Gang Niu, Jinping Zhang, Zhiyong Quan, Sunan Ding
Publikováno v: Journal of Advanced Dielectrics, Vol 9, Iss 4, Pp 1950032-1-1950032-7 (2019)
In this work, we have successfully grown high quality epitaxial β-Ga2O3 thin films on β-Ga2O3 (100) and Al2O3(0001) substrates using pulsed laser deposition (PLD). By optimizing temperature and oxygen pressure, the best conditions were found to be
Externí odkaz: https://doaj.org/article/d44a7418c79c4bedbad0be6b33ab973c
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8
Akademický článek
Visualizing Dirac nodal-line band structure of topological semimetal ZrGeSe by ARPES
Autor: Zhengwang Cheng, Zongyuan Zhang, Haigen Sun, Shaojian Li, Hui Yuan, Zhijun Wang, Yan Cao, Zhibin Shao, Qi Bian, Xin Zhang, Fangsen Li, Jiagui Feng, Sunan Ding, Zhiqiang Mao, Minghu Pan
Publikováno v: APL Materials, Vol 7, Iss 5, Pp 051105-051105-8 (2019)
As a member of ZrHM (H = Si/Ge/Sn; M = O/S/Se/Te) family materials, which were predicted to be the candidates of topological Dirac nodal-line semimetals, ZrGeSe exhibited particular properties, such as magnetic breakdown effect in the transport measu
Externí odkaz: https://doaj.org/article/074061a0ad2042b6a57125e3dc295432
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10
Synthesis, mechanism and characterization of urchin-like Ga2O3 microspheres
Autor: Jie Zhang, Wenxiang Mu, Fu Bo, Gaohang He, Sunan Ding, Yang Li, Zhitai Jia
Publikováno v: CrystEngComm. 24:3005-3013
A simple sonication–heat treatment method to prepare novel urchin-like β-Ga2O3 microspheres with uniformly distributed nanowires is reported. Its unique morphology is expected to have potential in optoelectronic devices and other fields.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bc8edf60d1ffe8eac49d0ea5eb4599e0
https://doi.org/10.1039/d2ce00055e
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