Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Sun-young Yea"'
Autor:
D. Y. Shin, Sanghoon Lee, Sunjae Chung, Xiaofeng Liu, Jacek K. Furdyna, Hyunji Son, Sun Young Yea
Publikováno v:
Solid State Communications. 147:309-312
We have investigated the effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs film using the planar Hall effect (PHE). Different thicknesses were obtained on a single GaMnAs specimen by using different etching times on selected a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9aadcaeb1806e830d84fd9d6d6354ab
https://doi.org/10.1016/j.ssc.2008.05.037
https://doi.org/10.1016/j.ssc.2008.05.037
Autor:
Sanghoon Lee, Taehee Yoo, Sunjae Chung, S. C. Kim, Sun Young Yea, Xiaofeng Liu, Jacek K. Furdyna, Hyunji Son
Publikováno v:
Applied Physics Letters. 96:092105
The properties of magnetic anisotropy of GaMnAs films along the growth direction were studied by Hall effect measurements. The magnetic anisotropy fields were obtained by analyzing the angular dependence of the planar Hall resistance and the anomalou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a3103fefea1865a5bb7d39a623754f8
https://doi.org/10.1063/1.3339301
https://doi.org/10.1063/1.3339301
Autor:
Taehee Yoo, Xiaofeng Liu, Sun Young Yea, Jacek K. Furdyna, Sanghoon Lee, Sunjae Chung, S. Khym
Publikováno v:
Applied Physics Letters. 95:202505
We report the realization of four distinct magnetic states using single layers of Fe at room temperature. When the Fe film was grown on the vicinal surface of GaAs, the fourfold-symmetric magnetization along crystallographic direction give rise to fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15e53c678e3a18dab2921487bf91aa8c
https://doi.org/10.1063/1.3266826
https://doi.org/10.1063/1.3266826
Publikováno v:
Journal of Applied Physics. 103:07F313
We have performed a systematic Hall measurement on the GaMnAs ferromagnetic films. The angular dependences of the Hall effects were obtained by changing the magnetic field angle in two different crystal planes [i.e., (001) and (110)]. The in-plane an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d7da8dafcf155a0b0b4d45330897ca1
https://doi.org/10.1063/1.2834448
https://doi.org/10.1063/1.2834448
Publikováno v:
Journal of Applied Physics. 103:07D118
Magnetotransport measurements were performed on GaMnAs films with four different thicknesses. The process of magnetization reorientation was investigated by planar Hall effect, from which the magnetization switching fields were determined for each fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d2444c979d5aca88451a6ad297fe48
https://doi.org/10.1063/1.2836789
https://doi.org/10.1063/1.2836789
Autor:
Hyunji Son, Sunjae Chung, Sun-young Yea, Shinhee Kim, Taehee Yoo, Sanghoon Lee, Liu, X., Furdyna, J. K.
Publikováno v:
Applied Physics Letters; 3/1/2010, Vol. 96 Issue 9, p092105, 3p, 1 Diagram, 1 Chart, 3 Graphs